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HER308

Description
3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size29KB,2 Pages
ManufacturerSynSemi
Websitehttp://www.synsemi.com/
Download Datasheet Parametric Compare View All

HER308 Overview

3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD

HER308 Parametric

Parameter NameAttribute value
MakerSynSemi
Reach Compliance Codeunknow
HER301 - HER308
PRV : 50 - 1000 Volts
Io : 3.0 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
HIGH EFFICIENT
RECTIFIER DIODES
DO-201AD
0.21 (5.33)
0.19 (4.82)
1.00 (25.4)
MIN.
0.375 (9.52)
0.285 (7.24)
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.16 grams
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55
°C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 3.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
HER
301
50
35
50
HER
302
100
70
100
HER
303
200
140
200
HER
304
300
210
300
3.0
HER
305
400
280
400
HER
306
600
420
600
HER
307
800
560
800
HER
308
1000
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
I
R(H)
Trr
150
1.1
10
50
50
50
- 65 to + 150
- 65 to + 150
75
1.7
A
V
µA
µA
ns
pf
°C
°C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
C
J
T
J
T
STG
Notes :
( 1 ) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
DC
Page 1 of 2
Rev. 01 : January 10, 200

HER308 Related Products

HER308 HER307 HER306 HER305 HER303 HER301
Description 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD
Maker SynSemi SynSemi SynSemi SynSemi SynSemi SynSemi
Reach Compliance Code unknow unknow unknown unknown unknow unknown
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