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HER157

Description
1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size197KB,2 Pages
ManufacturerDAYA
Websitehttp://www.cndaya.com/
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HER157 Overview

1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-15

Features
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
Mechanical Data
Case: Molded plastic DO-15
Epoxy: UL 94V0 rate flame retardant
Lead: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
260
o
C/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Mounting position: Any
Weight: 0.40 gram
-
-
TDD
-
D A Y A
-
HER151 - HER158
1.5 AMPS. High Efficient Rectifiers
DO-15
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
o
@T
A
= 55 C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.5A
Maximum DC Reverse Current
o
@T
A
=25 C at Rated DC Blocking Voltage
@ T
A
=125
o
C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance
Typical thermal resistance
Operating Temperature Range
( Note 2 )
Symbol HER HER HER HER HER HER HER HER
Units
151 152 153 154 155 156 157 158
50 100 200 300 400 600 800 1000
V
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
T
J
35
50
70
100
140
200
210
300
280
400
420
600
560
700
800 1000
V
V
A
A
1.5
50
1.0
1.3
5.0
150
50
50
60
-65 to +150
-65 to +150
75
35
1.7
V
uA
uA
nS
pF
o
C/W
o
C
o
C
Storage Temperature Range
T
STG
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mount on Cu-Pad Size 10mm x 10mm on PCB.
Factory Address: Taiguan Industrial zone, Yanjinyu Dongjin Rode No.1, XinXiang, HeNan, China

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HER157 HER158 HER156 HER155 HER154 HER153 HER151 HER152
Description 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 300 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, SILICON, RECTIFIER DIODE, DO-15 1.5 A, SILICON, RECTIFIER DIODE, DO-15 1.5 A, SILICON, RECTIFIER DIODE, DO-15

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