BSM 200 GB 120 DN2
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 200 GB 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
T
C
= 25 °C
T
C
= 80 °C
V
CE
I
C
Package
HALF-BRIDGE 2
Ordering Code
C67070-A2300-A70
1200V 290A
Symbol
V
CE
V
CGR
Values
1200
1200
Unit
V
V
GE
I
C
± 20
A
290
200
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
I
Cpuls
580
400
P
tot
1400
T
j
T
stg
R
thJC
R
thJCD
V
is
-
-
-
-
+ 150
-40 ... + 125
≤
0.09
≤
0.18
2500
20
11
F
40 / 125 / 56
sec
Vac
mm
K/W
°C
W
1
Oct-21-1997
BSM 200 GB 120 DN2
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE,
I
C
= 8 mA
Collector-emitter saturation voltage
V
GE
= 15 V,
I
C
= 200 A,
T
j
= 25 °C
V
GE
= 15 V,
I
C
= 200 A,
T
j
= 125 °C
Zero gate voltage collector current
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 25 °C
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 125 °C
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
AC Characteristics
Transconductance
V
CE
= 20 V,
I
C
= 200 A
Input capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Reverse transfer capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
rss
-
1
-
C
oss
-
2
-
C
iss
-
13
-
g
fs
108
-
-
nF
S
I
GES
-
-
400
I
CES
-
-
3
12
4
-
nA
V
CE(sat)
-
-
2.5
3.1
3
3.7
mA
V
GE(th)
4.5
5.5
6.5
V
Values
typ.
max.
Unit
2
Oct-21-1997
BSM 200 GB 120 DN2
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Switching Characteristics, Inductive Load at
T
j
= 125 °C
Turn-on delay time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 200 A
R
Gon
= 4.7
Ω
Rise time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 200 A
R
Gon
= 4.7
Ω
Turn-off delay time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 200 A
R
Goff
= 4.7
Ω
Fall time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 200 A
R
Goff
= 4.7
Ω
Free-Wheel Diode
Diode forward voltage
I
F
= 200 A,
V
GE
= 0 V,
T
j
= 25 °C
I
F
= 200 A,
V
GE
= 0 V,
T
j
= 125 °C
Reverse recovery time
I
F
= 200 A,
V
R
= -600 V,
V
GE
= 0 V
di
F
/dt = -2000 A/µs,
T
j
= 125 °C
Reverse recovery charge
I
F
= 200 A,
V
R
= -600 V,
V
GE
= 0 V
di
F
/dt = -2000 A/µs
T
j
= 25 °C
T
j
= 125 °C
-
-
12
36
-
-
Q
rr
-
0.5
-
µC
t
rr
V
F
-
-
2
1.8
2.5
-
µs
V
-
80
120
t
f
-
550
800
t
d(off)
-
80
160
t
r
-
110
220
t
d(on)
ns
Values
typ.
max.
Unit
3
Oct-21-1997
BSM 200 GB 120 DN2
Power dissipation
P
tot
=
ƒ(T
C
)
parameter:
T
j
≤
150 °C
1500
W
1300
P
tot
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
0
20
40
60
80
100
120
°C
160
Safe operating area
I
C
=
ƒ(V
CE
)
parameter:
D
= 0,
T
C
= 25°C ,
T
j
≤
150 °C
10
3
t
= 49.0µs
p
A
I
C
10
2
100 µs
1 ms
10
1
10 ms
10
0
0
10
10
1
10
2
DC
3
10
V
T
C
V
CE
Collector current
I
C
=
ƒ(T
C
)
parameter:
V
GE
≥
15 V ,
T
j
≤
150 °C
300
A
260
I
C
240
220
200
180
160
140
120
100
80
60
40
20
0
0
Transient thermal impedance
Z
th JC
=
ƒ(t
p
)
parameter:
D = t
p
/
T
10
0
K/W
10
-1
IGBT
Z
thJC
10
-2
D = 0.50
10
-3
0.20
0.10
0.05
10
-4
single pulse
0.02
0.01
20
40
60
80
100
120
°C
160
10
-5
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
T
C
t
p
4
Oct-21-1997
BSM 200 GB 120 DN2
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 80 µs,
T
j
= 25 °C
400
A
I
C
300
250
200
150
100
50
0
0
1
2
3
V
V
CE
5
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 80 µs,
T
j
= 125 °C
400
A
I
C
300
250
200
150
100
50
0
0
1
2
3
V
V
CE
5
17V
15V
13V
11V
9V
7V
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
I
C
= f (V
GE
)
parameter:
t
p
= 80 µs,
V
CE
= 20 V
400
A
I
C
300
250
200
150
100
50
0
0
2
4
6
8
10
V
14
V
GE
5
Oct-21-1997
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