Power Field-Effect Transistor, 6A I(D), 60V, 1.8ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| package instruction | CHIP CARRIER, R-CQCC-N15 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Minimum drain-source breakdown voltage | 60 V |
| Maximum drain current (ID) | 6 A |
| Maximum drain-source on-resistance | 1.8 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-CQCC-N15 |
| JESD-609 code | e4 |
| Number of terminals | 15 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR |
| Package form | CHIP CARRIER |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | GOLD |
| Terminal form | NO LEAD |
| Terminal location | QUAD |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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