SILICON PLANAR
EPITAXIAL PNP TRANSISTOR
2N2907ACSM4
•
•
•
•
Low Power, High Speed Saturated Switching
Hermetic Surface Mounted Package.
Ideally suited for High Speed Switching
and General Purpose Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
TA = 25°C
Total Power Dissipation at
Derate Above 37.5°C
Junction Temperature Range
Storage Temperature Range
-60V
-60V
-5V
-600mA
500mW
3.08mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
(Each Device)
Symbols
R
θJA
Parameters
Thermal Resistance, Junction To Ambient
Max.
325
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 9066
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com
SILICON PLANAR
EPITAXIAL PNP TRANSISTOR
2N2907ACSM4
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols
V(BR)CEO
(1)
Parameters
Collector-Emitter
Breakdown Voltage
Collector Cut-Off Current
Test Conditions
IC = -10mA
VCB = -60V
IB = 0
IE = 0
IE = 0
TA = 150°C
Min.
-60
Typ
Max.
Units
V
-10
-10
-10
-10
-50
-50
µA
nA
µA
µA
nA
nA
ICBO
VCB = -50V
IEBO
ICES
VCE(sat)
(1)
Emitter Cut-Off Current
Collector Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
VEB = -5V
VEB = -4V
VCE = -50V
IC = -150mA
IC = -500mA
IC = -150mA
IC = -500mA
IC = -0.1mA
IC = -1.0mA
IC = 0
IC = 0
IB = -15mA
IB = -50mA
IB = -15mA
IB = -50mA
VCE = -10V
VCE = -10V
VCE = -10V
TA = -55°C
75
100
100
50
100
50
-0.6
-0.4
-1.6
-1.3
-2.6
V
VBE(sat)
(1)
450
hFE
(1)
Forward-current transfer
ratio
IC = -10mA
IC = -150mA
IC = -500mA
VCE = -10V
VCE = -10V
300
DYNAMIC CHARACTERISTICS
| hfe |
Small signal forward-current
transfer ratio
Small Signal Current Gain
IC = -20mA
f = 100MHz
IC = -1.0mA
f = 1.0KHz
VCB = -10V
f = 1.0MHz
VEB = -2V
f = 1.0MHz
IC = -150mA
IB1 = -15mA
IC = -150mA
VCC = -30V
IB1 = - IB2 = -15mA
VCC = -30V
IC = 0
IE = 0
VCE = -10V
100
VCE = -20V
2
hfe
Cobo
Cibo
ton
toff
Output Capacitance
8
pF
30
Input Capacitance
Turn-On Time
45
ns
300
Turn-Off Time
Notes
(1) Pulse Width
≤
300us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 9066
Issue 1
Page 2 of 3
SILICON PLANAR
EPITAXIAL PNP TRANSISTOR
2N2907ACSM4
MECHANICAL DATA
Dimensions in mm (inches)
5.59 ± 0.13
(0.22 ± 0.005)
0.25 ± 0.03
(0.01 ± 0.001)
1.40 ± 0.15
(0.055 ± 0.006)
0.64 ± 0.08
(0.025 ± 0.003)
0.23 rad.
(0.009)
3
2
1.27 ± 0.05
(0.05 ± 0.002)
3.81 ± 0.13
(0.15 ± 0.005)
4
1
0.23 min.
(0.009)
1.02 ± 0.20
(0.04 ± 0.008)
2.03 ± 0.20
(0.08 ± 0.008)
LCC3 (MO-041BA)
Underside View
Pad 1
Collector
Pad 2
N/C
Pad 3
Emitter
Pad 4
Base
N/C = No Connection
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 9066
Issue 1
Page 3 of 3
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