2N3350DCSM datasheet, PDF - EEWORLD Datasheet

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2N3350DCSM: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6; CategoryDiscrete semiconductor The transistor; File Size11KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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2N3350DCSM Overview

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6

2N3350DCSM Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-CDSO-N6
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	40 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	50
JEDEC-95 code	MO-041BB
JESD-30 code	R-CDSO-N6
Number of components	2
Number of terminals	6
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Base Number Matches	1

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2N3350DCSM

Dimensions in mm (inches).

2.29 ± 0.20

(0.09 ± 0.008)

1.65 ± 0.13

(0.065 ± 0.005)

1.40 ± 0.15

(0.055 ± 0.006)

0.64 ± 0.06

(0.025 ± 0.003)

Dual Bipolar PNP Devices in a

hermetically sealed

LCC2 Ceramic Surface Mount

Package for High Reliability

Applications

4.32 ± 0.13

(0.170 ± 0.005)

2.54 ± 0.13

(0.10 ± 0.005)

2

1

A

3

4

5

Dual Bipolar PNP Devices.

V

CEO

= 40V

I

C

= 0.2A

All Semelab hermetically sealed products can

be processed in accordance with the

requirements of BS, CECC and JAN, JANTX,

JANTXV and JANS specifications.

6

0.23 rad.

(0.009)

A = 1.27 ± 0.13

(0.05 ± 0.005)

6.22 ± 0.13

(0.245 ± 0.005)

LCC2 (MO-041BB)

Pinouts

Pin 1 – Collector 1

Pin 2 – Base 1

Pin 3 – Base 2

Pin 4 – Collector 2

Pin 5 – Emitter 2

Pin 6 – Emitter 1

Parameter

V

CEO

*

I

C(CONT)

h

FE

f

t

P

D

Test Conditions

Min.

Typ.

Max.

40

0.2

Units

V

A

-

Hz

@ 1/10m (V

CE

/ I

C

)

50

250M

150

0.36

W

* Maximum Working Voltage

This is a shortform datasheet. For a full datasheet please contact

sales@semelab.co.uk.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Generated

2-Aug-02

2N3350DCSM Related Products

	2N3350DCSM	2N3350DCSMG4
Description	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6
Is it Rohs certified?	incompatible	conform to
package instruction	SMALL OUTLINE, R-CDSO-N6	SMALL OUTLINE, R-CDSO-N6
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.2 A	0.2 A
Collector-emitter maximum voltage	40 V	40 V
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	50	50
JEDEC-95 code	MO-041BB	MO-041BB
JESD-30 code	R-CDSO-N6	R-CDSO-N6
Number of components	2	2
Number of terminals	6	6
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz
Base Number Matches	1	1

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