2N3767SMD
MECHANICAL DATA
Dimensions in mm (inches)
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
3 .6 0 (0 .1 4 2 )
M a x .
1
3
0 .7 6
(0 .0 3 0 )
m in .
NPN BIPOLAR TRANSISTOR
IN A CERAMIC SURFACE MOUNT
PACKAGE FOR
HIGH REL APPLICATIONS
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
2
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
FEATURES
• HIGH VOLTAGE
9 .6
9 .3
1 1 .5
1 1 .2
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
• FAST SWITCHING
• CERAMIC SURFACE MOUNT PACKAGE
• SCREENING OPTIONS AVAILABLE
SMD1 (TO-276AB)
Underside View
PIN 1 – Base
PIN 2 – Collector
PIN 3 – Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
B
I
C
T
J ,
TSTG
P
D
Collector– Base Voltage (IE = 0)
Collector– Emitter Voltage (IB = 0)
Emiiter– Base Voltage (IB = 0)
Base Current
Collector Current
Operating and Storage Junction Temperature Range
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
100V
80V
6V
2A
4A
–55 to +150°C
25W
5°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 2754
Issue 2
2N3767SMD
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise stated)
Parameter
Test Conditions
OFF CHARACTERISTICS
V
(BR)CEO
I
CEX
I
EBO
I
CEO
I
CBO
Collector Emitter Breakdown Voltage
1
Collector Cutoff Current
Emitter Base Cutoff Current
Collector Emitter Cutoff Current
Collector Base Cutoff Current
I
C
= 100mA
V
CE
= 100V
V
CE
= 70V
V
EB
= 6V
V
CE
= 80V
V
CB
= 100V
I
C
= 50mA
h
FE
V
CE(sat)
V
BE
f
T
C
OB
h
fe
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Voltage
I
C
= 500mA
I
C
= 1.0A
I
C
= 1.0A
I
C
= 1.0A
V
CE
= 10V
V
CB
= 10V
V
CE
= 10V
I
B
= 0
V
BE
= 1.5V
V
BE
= 1.5V
T
A
= 150
°
C
I
C
= 0
I
B
= 0
I
E
= 0
V
CE
= 5V
V
CE
= 5V
V
CE
= 10V
I
B
= 0.1A
V
CE
= 10V
I
C
= 500mA
f = 10MHz
Common Base Output Capacitance
Small Signal Current Gain
I
C
= 0A
f = 100KHz
I
C
= 100mA
f = 1.0kHz
1) Pulse test : Pulse Width < 100µs ,Duty Cycle <1%
2) f
t
is defined as the frequency at which |h
fe
| extrapolates to untity.
Min.
80
Typ.
Max. Unit
V
100
1.0
0.75
0.7
0.1
mA
µA
ON CHARACTERISTICS
30
40
20
2.5
1.5
V
160
—
TRANSIENT CHARACTERISTICS
Transistion Frequency
10
50
40
MHz
pF
—
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 2754
Issue 2
Microcontroller MCU
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