2N3634CSM
MECHANICAL DATA
Dimensions in mm (inches)
0.51 ± 0.10
(0.02 ± 0.004)
PNP SILICON TRANSISTOR IN A
HERMETICALLY SEALED CERAMIC
SURFACE MOUNT PACKAGE FOR
HIGH RELIABILITY APPLICATIONS
0.31 rad.
(0.012)
2.54 ± 0.13
(0.10 ± 0.005)
3
2
1
0.76 ± 0.15
(0.03 ± 0.006)
FEATURES
• High Voltage Switching
• Low Power Amplifier Applications
A
1.40
(0.055)
max.
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
A=
0.31 rad.
(0.012)
• Hermetic Ceramic Surface Mount
Package
1.02 ± 0.10
(0.04 ± 0.004)
LCC1
Underside View
PAD 1 – Base
PAD 2 – Emitter
PAD 3 – Collector
APPLICATIONS:
• CECC Screening Options
• Space Quality Levels Options.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CEO
V
CBO
V
EBO
I
C
P
D
T
J
, T
STG
Collector – Emitter Voltage
Collector – Base Voltage
Emmiter – Base Voltage
Collector Current
Total Device Dissipation @ T
A
= 25°C
Operating and Storage Junction Temperature Range
140V
140V
5V
1A
500mW
–65 to +200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 2/00
2N3634CSM
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
Parameter
Test Conditions
OFF CHARACTERISTICS
BV
CEO
BV
CBO
BV
EBO
I
EBO
I
CBO
Collector–Emitter Breakdown Voltage
1
I
C
= 10mA
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Emitter Cut-off Current
Collector Cut-off Current
I
C
= 100
m
A
I
C
= 0
V
BE
= 3.0V
V
CB
= 100V
I
C
= 0.1mA
I
C
= 1mA
h
FE
DC Current Gain
I
C
= 10mA
I
C
= 50mA
I
C
= 150mA
V
CE(sat)
V
BE(sat)
Collector – Emitter Saturation Voltage
1
Base – Emitter Saturation Voltage
I
C
= 10mA
I
C
= 50mA
I
C
= 10mA
I
C
= 50mA
V
CE
= 30V
V
CB
= 20V
V
BE
= 1.0V
I
B
= 0
I
E
= 0
I
E
= 10
m
A0
I
C
= 0
I
E
= 0
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
I
B
= 1mA
I
B
= 5mA
I
B
= 1mA
I
B
= 5mA
I
C
= 50mA
f = 100MHz
I
E
= 0
f = 100kHz
I
C
= 0
f = 100kHz
Min.
140
140
5.0
Typ.
Max. Unit
V
50
100
nA
ON CHARACTERISTICS
40
45
50
50
25
0.3
0.5
0.8
.65
0.9
V
V
150
-
SMALL SIGNAL CHARACTERISTICS
f
t
C
ob
C
ib
h
ie
h
re
h
fe
h
oe
NF
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Siganl Current Gain
Ourput Admittance
V
CE
= 10V
R
S
= 1.0
W
I
C
= 0.5mA
f = 1kHz
V
BE
= 4.0V
I
B1
= I
B2
=5mA
V
CE
= 10V
I
C
= 10mA
f = 1kHz
40
150
10
75
100
600
3.0
160
200
3.0
MHz
pF
pF
W
x10
-4
—
m
mhos
dB
SWITCHING CHARACTERISTICS
t
on
t
off
Turn–On Time
Turn–Off Time
V
CC
= 100V
I
C
= 50mA
400
600
ns
1) Pulse test : Pulse Width < 300
m
s ,Duty Cycle < 2%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 2/00
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