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2N3266

Description
Power Bipolar Transistor, 60V V(BR)CEO, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size85KB,1 Pages
ManufacturerCrimson Semiconductor Inc.
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2N3266 Overview

Power Bipolar Transistor, 60V V(BR)CEO, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN

2N3266 Parametric

Parameter NameAttribute value
package instructionTO-63, 3 PIN
Reach Compliance Codeunknown
Collector-emitter maximum voltage60 V
ConfigurationSingle
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-63
JESD-30 codeO-MUPM-X3
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)125 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Base Number Matches1
POWER SILICON NPN
Item
Number
Part Number
Manufacturer
Ic
Max
(A)
V(BR)CEO
hFE
fT
Max
(Hz)
(V)
Min
ICBO
Max
(A)
t,
Max
(8)
tf
Max
(8)
PD
Max
(W)
Toper
Max
(Oe)
Package
Style
Additional Transistors,
(Co nt'
d)
B0221
B0221
B0221
2N1644
HSE912
ST403
B0795
B0795
B0795
SS2005
2N1613B
SS2001
SS2017
SS2009
SS2021
BUW48
BUW48
2N497
07Bl
l?~2Q13
5
10
15
20
gjg~
25
ST402
SOT3055
HSE820
B0222
BOX70
BOX70
2N3264
2N3266
HSE838
B0797
B0117
2N656
2N6565
71T2
73T2
07B2
30
~~~~g~~
35
40
gjg~
45
B0118
2N3420S
BSS30
HSE910
BOl12
B0112
72T2
74T2
50
Semi Inc
Natl Semi
NthAmerSemi
See Index
Hybrid Semi
SemiconTech
Natl Semi
NthAmerSemi
GE Solid St
SldSt Indus
SldSt Indus
See Index
SldSt Indus
SldSt Indus
SldSt Indus
SldSt Indus
ThmsnCSFEFC
Semelab
See Index
SemiconTech
::;emlcon
I
ecn
SemiconTech
SemiconTech
Solitron
Hybrid Semi
See Index
NthAmerSemi
Semelab
See Index
See Index
!"!Y!l~~
::;eml
Hybrid Semi
Hybrid Semi
See Index
SGS·Ates
See Index
Space Power
Hybrid Semi
Hybrid Semi
SemiconTech
SemlconTech
SemiconTech
NthAmerSemi
Solitron
NthAmerSemi
Hybrid Semi
Gentron
NthAmerSemi
Hybrid Semi
HYbrid Semi
~mlconlecn
40
40
40
40
40
45
45
45
45
50
30
30
30
40
50
15
25
25
25
20
120
120
120
120
40
1.0M
1.0M
1.0M
50M
3.0M
8.0M
8.0M
8.0M
100u
100u
20m
250n
~g
50
50
50
50
60
~g
40
40
100
100
10
10
12
12
15
20
20
20
20
20
20
20
25
25
30
30
30
30
30
30
60
60
60M
120
120
300
300
8.0M
8.0M
36
36
40
70
20M
0.5u
0.5u
lOu
50u
50u
50u
20m
1.0m
2.0n
60
60
60
~g
60
60
~~
~~
~g~
800k
1.0M
1.5M
1.5M
20M
20M
250n
60
60
60
60
60
60
80
80
80
80
80
~g
60
60
60
60
~~
~gg~
1.0M
4.0M
110
90
90
90
90
90
20m
20m
50u
100u
5.0m
O.lm
lOu
lOu
50u
75u
50u
50u
50u
lOU
10n
100u
lOU
lOu
50u
75u
500n
500n
500n
500n
36
36
36
2.0
15
25
65
65
65
65
65
1.0
65
65
65
65
150
150
4.0
2.0
2.U
1.5
25
117
115
36
75
75
83
125
115
65
30
4.0
4.0
2.0
2.0
2.0
2.0
1.5
20
1.0
3.0
15
20
20
2.0
2.0
65
65
75
75
175
175
36
36
36
65
65
65
65
150
150
45
65
115
1.0
90
115
15
65
65
83
175 J
140 J
175 A
TO·220AB
TO·220AB
TO·220AB
TO·5
TO·66
TO·53
TO·220AB
TO·220AB
TO·220AB
N/A
N/A
N/A
N/A
N/A
TO·218
TO·218
TO·5
TO·37var
(Jan
StR·l0
TO·53
TO·3
TO·3
TO·220AB
TO·220AB
TO·220AB
Macro·T
TO·63
175 J
~b~5
175 J
175 J
g~~
175 A
140 J
1~~
175 J
175 J
14U
J
140 J
140 J
140
175 J
175 J
175 J
175 J
175 J
175 J
175J
140 J
175S
175 J
140 J
140 J
140 J
175J
175 J
100
+g:~~gAB
TO·3
TO·220AB
TO·3
TO·5
TO·39
TO·37var
TO·37var
TO·37var
TO·3
N/A
TO·39
TO·66
TO·3
TO·3
TO·37var
TO·37var
60
60
60
60
20M
~g
60
60
60
60
60
60
~g
30
40
40
50
50
50
75
75
9
~g
90
120
120
130
130
200
200
~g~
30M
80M
3.0M
30M
30M
~f~.10
60
60
~~~gg~
55
SS2014
BOX72
BOX72
PT7930
PT7932
B0220
B0220
B0220
SS2002
SS2018
SS2010
SS2022
BUW49
BUW49
ST415
B0799
60
SldSt Indus
SldSt Indus
Semelab
NthAmerSemi
Sid St DYcs
Sid St DYcs
Semi Inc
Natl Semi
NthAmerSemi
SldSt Indus
SldSt Indus
SldSt Indus
SldSt Indus
ThmsnCSFEFC
Semelab
SemiconTech
See Index
!"!Y!'na ::;eml
Hybrid Semi
Hybrid Semi
Solitron
Hybrid Semi
Hybrid Semi
H~rid
Semi
SdSt Indus
SldSt Indus
See Index
SldSt Indus
SldSt Indus
SldSt Indus
ThmsnCSFEFC
Solitron
See Index
SemiconTech
SemiconTech
jg
70
70
70
70
70
70
70
70
~~~~~
~:~~:~~
~g
70
70
70
70
80
80
80
80
:g
40
40
100
100
10
10
12
15
25
40
40
50
50
20
20
20
20
20
20
30
30
30
30
30
g
2
~g
60
80
80
150
150
120
120
120
1.5M
1.5M
350n
350n
1.0M
1.0M
100M
LOu
1.Ou
~~Al'
N/A
TO·220AB
TO·220AB
T0-3
TO·3
TO·220AB
TO·220AB
TO·220AB
TO·3
TO·3
N/A
N/A
N/A
N/A
TO·218
. TO·218
StR·1/4
TO·220AB
TO·3
N/A
TO·218
TO·3
TO·66
N/A
N/A
Macro-T
175 A
175 A
~gg
120
120
300
300
~~g~
1.0U
1.0u
H~
H~~
65
60
.
70
~~~~~g2
gg
8.0M
8.0M
8.0M
4.0M
0.4u
0.4u
10m
O.lm
5:.0_m
50u
5.0m
100u
5.0m
100u
20m
20m
500n
500n
500n
500n
175 J
75
80
HSE839
2N3421S
HSE3002
HSE825
HSE911
SS2007
SS2015
2N3263
80
80
80
80
80
90
90
90
~~
~gg:
1.0M
120
500k
1.0M
2.0M
'lg
~:g
j
140 J
175S
140 J
140 J
140 J
175 J
17~J
:;:g:~20AB
60
60
55
120
300
300
6m
1.5u
0.5u
36
36
36
lOu
50u
50u
.
85
90
SS2019
SS2011
SS2023
ESM3000
SOT99901
2N498
0703
07G3
~~~~g~
~~~~~~~~s
~g
90
90
90
100
100
100
100
100
100
100
100
100
100
100
100
~g
40
100
100
10
12
12
12
15
15
15
30
30
40
40
l~g
20M
20M
1~~
65
65
65
400
4.0
1.0
1.5
65
175
175
175
90
~~A63
N/A
N/A
N/A
StR·M12
TO·114
TO·5
Can
StR·l0
175 J
175 J
175 J
175 J
gggg~
B0801
PT7933
PT7935
PT7934
HSE3003
~~~I?J~ml
Natl Semi
Sid St DYcs
Sid St DYes
Sid St DYcs
Hybrid Semi
20M
20M
4.0M
4.0M
4.0M
~~
+g:~~g~g
175 A
175 A
175 A
140 J
TO·220AB
TO·3
TO·3
TO·3
TO·218
95
150
150
200
500k
100u
350n
350n
350n
1.0u
1.0u
1.0u
981

2N3266 Related Products

2N3266 2N497 2N498
Description Power Bipolar Transistor, 60V V(BR)CEO, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN Small Signal Bipolar Transistor, 60V V(BR)CEO, NPN, Silicon, TO-5, TO-5, 3 PIN Small Signal Bipolar Transistor, 100V V(BR)CEO, NPN, Silicon, TO-5, TO-5, 3 PIN
package instruction TO-63, 3 PIN TO-5, 3 PIN TO-5, 3 PIN
Reach Compliance Code unknown unknown unknown
Collector-emitter maximum voltage 60 V 60 V 100 V
Configuration Single Single Single
Minimum DC current gain (hFE) 20 12 12
JEDEC-95 code TO-63 TO-5 TO-5
JESD-30 code O-MUPM-X3 O-MBCY-W3 O-MBCY-W3
Number of terminals 3 3 3
Maximum operating temperature 175 °C 200 °C 200 °C
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form POST/STUD MOUNT CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 125 W 4 W 4 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form UNSPECIFIED WIRE WIRE
Terminal location UPPER BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
Is it Rohs certified? - incompatible incompatible
JESD-609 code - e0 e0
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
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