MEDIUM POWER NPN SILICON
NE678M04
HIGH FREQUENCY TRANSISTOR
FEATURES
•
•
•
•
HIGH GAIN BANDWIDTH:
f
T
= 12 GHz
HIGH OUTPUT POWER:
P
-1dB
= 18 dBm at 1.8 GHz
HIGH LINEAR GAIN:
G
L
= 13 dB at 1.8 GHz
NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
+0.40
-0.05
2
+0.30
2.05±0.1
1.25±0.1
3
2.0±0.1
R55
1.25
0.65 0.65
0.65 0.65
DESCRIPTION
The NE678M04 is fabricated using NEC's HFT3 wafer pro-
cess. With a transition frequency of 12 GHz, the NE678M04 is
usable in applications from 100 MHz to 3 GHz. The NE678M04
provides P1dB of 18 dBm, even with low voltage and low
current, making this device an excellent choice for the driver
stage for mobile or fixed wireless applications.
The NE678M04 is housed in NEC's new low profile/flat lead
style "M04" package
1
+0.30
-0.05
(leads 1, 3 and ,4)
0.59±0.05
+0.11
-0.05
MAX
100
100
75
dBm
dB
dBm
dB
%
dB
GHz
pF
8.0
120
18.0
13.0
13.5
10.5
55
1.7
12.0
0.42
0.7
2.5
150
+0.1
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
NE678M04
M04
2SC5753
UNITS
nA
nA
MIN
TYP
+0.01
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
EIAJ
3
REGISTRATION NUMBER
SYMBOLS
I
CBO
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current
1
Gain at V
CE
= 3 V, I
C
= 30 mA
Output Power at 1 dB compression point at V
CE
= 2.8 V, I
CQ
= 10 mA,
f = 1.8 GHz, P
in
= 7 dBm
Linear Gain at V
CE
= 2.8 V, I
C
= 10 mA, f = 1.8 GHz, P
in
= -5 dBm
Maximum Available Gain
4
at V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
Collector Efficiency at V
CE
= 2.8 V, I
CQ
= 10 mA, f = 1.8 GHz,
P
in
= 7 dBm
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz, Z
S
= Z
opt
Gain Bandwidth at V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
Reverse Transfer
Capacitance
2
at V
CB
= 3 V, I
C
= 0, f = 1 MHz
DC
I
EBO
h
FE
P
1dB
G
L
RF
MAG
|S
21E
|
2
η
c
NF
f
T
Cre
Notes:
1. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the
guard pin of capacitance meter.
3. Electronic Industrail Association of Japan.
4.
MAG = |S
21
|
|S
12
|
(
K ±
K
2
- 1
).
California Eastern Laboratories
4
1.30
NE678M04
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
2
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°C
°C
RATINGS
9.0
6.0
2.0
100
205
150
-65 to +150
ORDERING INFORMATION
PART NUMBER
NE678M04-T2
QUANTITY
3k pcs./reel
THERMAL RESISTANCE
SYMBOLS
R
th j-a
PARAMETERS
Thermal Resistance from
Junction to Ambient
UNITS
°C/W
RATINGS
600
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on a 1.08cm
2
x 1.0 mm thick glass epoxy PCB.
Note:
1. Mounted on a 1.08cm
2
x 1.0 mm thick glass epoxy PCB.
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Glass Epoxy PCB
2
(1.08 cm x 1.0 mm (t) )
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
300
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
2
3
4
5
6
f= 1 MHz
Total Power Dissipation P
out
(mW)
250
205
200
150
100
50
0
25
50
75
100
125
150
Ambient Temperature T
A
(ºC)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
100
90
700
µA
500
µA
400
µA
300
µA
200
µA
1000
DC CURRENT GAIN
vs. COLLECTOR CURRENT
V
CE
= 3 V
Collector Current I
C
(mA)
70
60
50
40
30
20
10
0
2
DC Current Gain (h
FE
)
80
600
µA
100
I
B
=100
µA
4
6
8
10
0.1
1
10
100
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
NE678M04
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°C)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
15
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
, (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
30
MSG
25
20
15
10
5
0
0.1
|S
21e
|
2
MAG
Gain Bandwidth Product f
T
(GHz)
V
CE
= 3 V
f = 2 GHz
V
CE
= 3 V
I
C
= 30 mA
10
5
0
1
10
100
1
10
Collector Current I
C
(mA)
Frequency f (mA)
INSERTION POWER GAIN,
MAG, MSG vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
, (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
21e
|
2
, (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
V
CE
= 3 V
f = 1 GHz
25
V
CE
= 3 V
f = 2 GHz
MSG
MAG
20
20
MSG
MAG
15
|S
21e
|
2
15
10
10
|S
21e
|
2
5
5
0
1
10
100
0
1
10
100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
INSERTION POWER GAIN,
MAG vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
8
V
CE
= 3 V
f = 2 GHz
Insertion Power Gain |S
21e
| , (dB)
Maximum Available Power Gain MAG (dB)
25
V
CE
= 3 V
f = 2.5 GHz
16
15
MAG
10
|S
21e
|
2
Noise Figure NF (dB)
6
12
4
8
5
2
NF
0
1
10
4
0
1
10
100
0
100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Associated Gain G
a
(dB)
2
20
G
a
NE678M04
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°C)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25
V
CE
= 3.2 V
f = 0.9 GHz
I
cq
= 10 mA (RF OFF)
250
P
out
200
G
P
Output Power P
out
(dbm)
Power Gain G
p
(dB)
20
15
150
10
I
C
5
η
C
100
50
0
-10
-5
0
5
10
0
15
Input Power P
in
(dBm)
Collector Current I
C
(mA),
Collector Efficiency
ηc
(%)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25
V
CE
= 2.8 V
f = 1.8 GHz
I
cq
= 10 mA (RF OFF)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
250
25
250
V
CE
= 3.2 V
f = 1.8 GHz
I
cq
= 10 mA (RF OFF)
Collector Current I
C
(mA),
Collector Efficiency
ηc
(%)
Output Power P
out
(dbm)
Power Gain G
p
(dB)
15
G
P
10
η
C
5
I
C
0
-10
-5
0
5
10
150
Output Power P
out
(dbm)
Power Gain G
p
(dB)
20
200
20
200
15
G
P
10
η
C
5
I
C
150
100
100
50
50
0
15
0
-10
-5
0
5
10
0
15
Input Power P
in
(dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25
V
CE
= 3.2 V
f = 2.4 GHz
I
cq
= 10 mA (RF OFF)
Input Power P
in
(dBm)
250
Output Power P
out
(dbm)
Power Gain G
p
(dB)
20
200
15
G
P
10
η
C
5
I
C
0
-10
-5
0
5
10
150
100
50
0
15
Input Power P
in
(dBm)
Collector Current I
C
(mA),
Collector Efficiency
ηc
(%)
P
out
Collector Current I
C
(mA),
Collector Efficiency
ηc
(%)
P
out
P
out
NE678M04
TYPICAL SCATTERING PARAMETERS
(T
A
= 25°C)
j50
j25
j10
0
10
S11
-j10
25
S22
50 100
j100
+90º
+135º
+45º
5 10 15 20
+180º
+0º
-135º
-j25
-j50
-j100
-45º
-90º
NE678M04
V
C
= 2 V, I
C
= 10 mA
FREQUENCY
GHz
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.500
1.800
1.900
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
MAG
0.72
0.68
0.65
0.63
0.62
0.60
0.60
0.60
0.60
0.60
0.59
0.59
0.59
0.59
0.59
0.60
0.61
0.63
0.65
0.67
0.69
0.71
S
11
ANG
-45.97
-81.43
-106.66
-124.06
-136.69
-148.20
-155.78
-161.77
-167.38
-171.69
170.30
161.69
158.90
156.19
142.62
128.82
114.69
101.16
89.04
78.45
68.99
59.90
MAG
23.42
19.17
15.41
12.56
10.53
8.85
7.72
6.86
6.15
5.59
3.81
3.21
3.05
2.90
2.35
1.97
1.69
1.47
1.29
1.15
1.02
0.92
S
21
ANG
152.40
132.28
118.19
108.21
100.63
94.98
89.80
85.45
81.38
77.66
61.44
52.84
50.05
47.32
33.99
21.32
9.12
-2.44
-13.44
-23.86
-33.79
-43.00
MAG
0.02
0.04
0.05
0.05
0.06
0.06
0.06
0.06
0.07
0.07
0.08
0.09
0.09
0.09
0.11
0.13
0.14
0.16
0.18
0.19
0.21
0.23
S
12
ANG
65.62
52.02
42.17
37.11
33.66
32.53
31.81
31.70
31.29
31.31
33.17
33.52
33.69
33.45
32.55
29.86
26.40
21.89
16.66
10.92
4.77
-1.43
MAG
0.90
0.74
0.61
0.52
0.46
0.38
0.36
0.34
0.33
0.32
0.31
0.32
0.32
0.33
0.36
0.39
0.43
0.47
0.50
0.53
0.57
0.60
S
22
ANG
-29.51
-51.31
-66.86
-77.84
-86.27
-92.24
-98.70
-102.52
-106.64
-110.16
-123.84
-130.08
-131.91
-133.96
-142.01
-149.47
-156.17
-163.41
-171.39
179.62
170.14
160.66
0.10
0.18
0.26
0.34
0.42
0.56
0.62
0.68
0.74
0.79
1.00
1.07
1.10
1.11
1.14
1.15
1.12
1.07
1.03
0.98
0.94
0.92
K
MAG
1
(dB)
29.97
26.71
24.93
23.61
22.62
21.75
21.00
20.32
19.72
19.17
16.81
13.98
13.41
12.93
11.02
9.63
8.62
7.95
7.59
7.69
6.86
6.09
Note:
1. Gain Calculations:
MAG =
|S
21
|
|S
12
|
(
K –
K
2
- 1
).
When K
≥
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
∆
| - |S
11
| - |S
22
|
,
∆
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
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