2N6851LCC4-JQR-B datasheet, PDF

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2N6851LCC4-JQR-B: DescriptionPower Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size117KB，3 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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2N6851LCC4-JQR-B Overview

Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN

2N6851LCC4-JQR-B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	4 A
Maximum drain-source on-resistance	0.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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P-CHANNEL

POWER MOSFET

2N6851

•

Hermetic TO39 Metal Package

Dynamic dv/dt Rating

Simple Drive Requirements

Screening Options Available

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C unless otherwise stated)

VDS

VGS

IDM

(1)

dv/dt

(2)

Tstg

Drain – Source Voltage

Gate – Source Voltage

Continuous Drain Current @ Tcase = 25°C

Continuous Drain Current @ Tcase = 100°C

Pulsed Drain Current

Total Power Dissipation @ Tcase = 25°C

Linear De-rating Factor @ Tcase

≥

25°C

Peak Diode Recovery dv/dt

Operating Temperature Range

Storage Temperature Range

-200V

±20V

-4.0A

-2.4A

-16A

25W

200mW/°C

-5V/ns

-55°C to +150°C

THERMAL CHARACTERISTICS

Symbol

θJC

Notes:

Repetitive Rating; Pulse width limited by maximum junction temperature

ISD

≤

-4.0A, di/dt

≤

-120A/µs, VDD

≤

-200V, TJ

≤

150°C

Pulse width

≤

380 µs; Duty Cycle

≤

By design. Not a production test.

Parameters

Thermal Resistance, Junction To Case

Max

Units

°C/W

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Document Number 10351

Issue 1

Page 1 of 3

Website:

http://www.semelab-tt.com

2N6851LCC4-JQR-B Related Products

	2N6851LCC4-JQR-B	2N6851R1	2N6851LCC4-JQR-A
Description	Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN	Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN	Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
Is it Rohs certified?	incompatible	conform to	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	200 V	200 V	200 V
Maximum drain current (ID)	4 A	4 A	4 A
Maximum drain-source on-resistance	0.8 Ω	0.8 Ω	0.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF	TO-205AF	TO-205AF
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1

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