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2SC4738Y

Description
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
CategoryDiscrete semiconductor    The transistor   
File Size195KB,4 Pages
ManufacturerGalaxy Microelectronics
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2SC4738Y Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,

2SC4738Y Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Base Number Matches1
Production specification
Audio Frequency General Purpose Amplifier Applications
FEATURES
High voltage and high current.
High h
FE
.
Complementary to 2SA1832.
Small package.
2SC4738
Pb
Lead-free
SOT-523
ORDERING INFORMATION
Type No.
2SC4738
Marking
LY/LG/LB
Package Code
SOT-523
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
Parameter
Collector-Base Voltage
Value
60
Units
V
V
CEO
Collector-Emitter Voltage
50
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current -Continuous
150
mA
I
B
Base Current
30
mA
P
C
Collector Power Dissipation
100
mW
T
j,
T
stg
Junction and Storage Temperature
-55 to +125
H029
Rev.A
www.gmesemi.com
1

2SC4738Y Related Products

2SC4738Y 2SC4738BL 2SC4738GR
Description Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 0.15 A 0.15 A 0.15 A
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 350 200
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 80 MHz 80 MHz 80 MHz
Base Number Matches 1 1 1
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