2SC4518/4518A
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
Application :
Switching Regulator, Lighting Inverter and General Purpose
s
Absolute maximum ratings
(Ta=25°C)
Symbol 2SC4518 2SC4518A
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
900
550
7
5(
Pulse
10)
2.5
35(Tc=25°C)
150
–55 to +150
1000
Unit
V
V
V
A
A
W
°C
°C
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=1.8A
I
C
=1.8A, I
B
=0.36A
I
C
=1.8A, I
B
=0.36A
V
CE
=12V, I
E
=–0.35A
V
CB
=10V, f=1MHz
(Ta=25°C)
2SC4518 2SC4518A
100
max
100
max
550
min
10 to 25
0.5
max
1.2
max
6
typ
50
typ
V
V
MHz
pF
Unit
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
µ
A
V
16.9
±0.3
8.4
±0.2
µ
A
13.0min
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(Ω)
139
I
C
(A)
1.8
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.27
I
B2
(A)
–0.9
t
on
(
µ
s)
0.7
max
t
stg
(
µ
s)
4
max
t
f
(
µ
s)
0.5
max
2.54
3.9
B C E
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
5
70
0
mA
600mA
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
C ol l e c t o r - E m i tt e r Sa t u r a t i o n Vol t ag e V
C E ( s at)
(V )
B a s e - Em i t t e r Sa t u r a ti o n V o l t ag e V
B E (s at)
( V)
1.5
I
C
/ I
B
= 5 Co ns t .
I
C
– V
BE
Temperature Characteristics
(Typical)
5
( V
CE
= 4V )
C o l l e c to r C u r r e n t I
C
( A)
25 0m A
3
1.0
V
B E
( s a t)
C ol l e c t o r C ur r ent I
C
( A)
0.5
1
5
10
4
40 0m A
4
3
15 0m A
2
2
0.5
I
B
=50mA
1
1
V
C E
( sa t )
0
0.03 0.05
0 .1
0
0
0. 2
0.4
0.6
0 .8
1. 0
1.2
0
0
1
2
3
4
Col l e ct or - Em it t er V ol ta ge V
C E
(V)
Co l l ec to r C ur r en t I
C
( A)
B a s e - Em i t t o r Vo l t a g e V
B E
( V )
( V
CE
= 4 V )
50
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
FE
– I
C
Temperature Characteristics
(Typical)
125˚C
D C Cu r r en t Ga i n h
FE
S w i t c h i ng T i m e
t
on•
t
stg•
t
f
(
µ
s )
7
5
t
o n
•t
s t g
• t
f
– I
C
Characteristics
(Typical)
θ
j - a
– t Characteristics
4
25˚C
V
CC
2 5 0 V
I
C
: I
B 1
: I
B2
=1 :0 . 15 :– 0 .5
1
t
f
0 .5
t
on
0 .1
0.2
t
s tg
–55˚C
1
10
0. 5
0. 3
5
0.02
0.05
0.1
0 .5
1
5
0. 5
1
5
1
10
Time t(ms)
100
1000
Co l l ec t or C urre nt I
C
(A )
Co l le c to r Cu r r en t I
C
( A)
Safe Operating Area
(Single Pulse)
20
10
5
C olle c to r C u r r e n t I
C
( A )
Co llec to r C u r r e n t I
C
( A )
10
0
µ
Reverse Bias Safe Operating Area
20
10
5
M ax im um P ow e r D i s s i p a t i o n P
C
( W )
35
Pc – T a Derating
s
30
W
ith
In
fin
ite
1
0.5
1
0 .5
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1.0A
Duty:less than 1%
2SC 45 1 8
1 00
5 00
20
he
at
si
nk
10
0.1
0.05
0. 03
10
Without Heatsink
Natural Cooling
0 .1
0.05
W i t ho u t He a t s i nk
2S C 4 5 18 A
1 00 0
2
0
0
25
50
75
100
1 25
150
50
10 0
5 00
1000
0.03
50
C ol l ec t or - Emi t t e r V ol ta ge V
C E
(V)
Co l le c to r - E m it t er Vo l ta ge V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( ˚ C)
113
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