2SA1492
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC3856)
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SA1492
–180
–180
–6
–15
–4
130(Tc=25°C)
150
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
2SA1492
–100
max
–100
max
–180
min
50
min
∗
–2.0
max
20
typ
500
typ
V
pF
20.0min
4.0max
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=–180V
V
EB
=–6V
I
C
=–50mA
V
CE
=–4V, I
C
=–3A
I
C
=–5A, I
B
=–0.5A
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
Unit
µ
A
µ
A
V
19.9
±0.3
4.0
a
b
ø3.2
±0.1
MHz
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
∗h
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
5.45
±0.1
B
C
E
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
R
L
(Ω)
4
I
C
(A)
–10
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(A)
–1
I
B2
(A)
1
t
on
(
µ
s)
0.6typ
t
stg
(
µ
s)
0.9typ
t
f
(
µ
s)
0.2typ
5.45
±0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
Co l l e c t o r - Em i t t e r Sa t u r a ti on V ol t ag e V
C E (sa t)
(V )
–15
–1
V
CE
(sat) – I
B
Characteristics
(Typical)
– 3
I
C
– V
BE
Temperature Characteristics
(Typical)
– 15
( V
CE
= – 4 V )
–
A
0.6
A
–0.
4A
C o l l e c t o r Cu r r e n t I
C
( A)
–0.2
–10
A
C o l l e c t o r C u r r en t I
C
( A)
–2
– 10
–0 .1 A
mp)
Temp
)
se T
e
125
˚C
25˚C
(Case
–5
–50mA
–1
–5
I
B
=–20mA
I
C
= – 10 A
–5 A
0
0
– 0. 5
–1 .0
– 1. 5
–2 .0
0
0
0
0
–1
–2
–3
–4
–30˚C
(Case
Te
(Ca
–1
B as e - Em i t t o r Vo l t a g e V
B E
( V )
mp)
–2
Coll e ct o r- Em i t t er Vo l ta ge V
C E
( V)
Bas e C ur r e nt I
B
( A)
(V
C E
= – 4 V )
3 00
D C C ur r en t Ga i n h
FE
D C C u r r e n t G ai n h
F E
200
25 ˚ C
100
–3 0˚ C
( V
C E
= –4 V)
12 5˚ C
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
3
Typ
1 00
50
1
0.5
50
10
–0.02
–0. 1
– 0. 5
–1
–5 – 1 0 – 1 5
20
– 0 .0 2
– 0 .1
– 0 .5
–1
–5
– 10 –15
0.1
1
10
100
Time t(ms)
1 00 0 2 0 00
C o ll e ct o r Curre nt I
C
(A )
C ol l ec t or C ur r en t I
C
( A )
f
T
– I
E
Characteristics
(Typical)
( V
C E
= –1 2V)
30
–40
Safe Operating Area
(Single Pulse)
130
3m
Pc – Ta Derating
Cu t-o ff F r e q u e n c y f
T
(M H
Z
)
–10
C olle c to r C u r r e n t I
C
( A )
10
m
s
s
0m
M a xim u m P o w e r D i s s i p a t i o n P
C
( W )
10
Typ
20
s
100
W
ith
–5
D
In
C
fin
ite
he
at
si
nk
–1
–0.5
50
10
Without Heatsink
Natural Cooling
0
0.02
0.1
1
10
–0.1
–3
–1 0
–1 00
– 2 00
3.5
0
W i t h o ut H e at s i n k
0
25
50
75
100
125
150
Em it t e r Cu rre nt I
E
(A )
Co l le c to r - E m it t er Vo l ta ge V
C E
( V)
A m b i e n t T em p e r a tu r e T a ( ˚ C )
20
PCB Design
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