GENERAL PURPOSE SILICON
NPN TRANSISTOR
2N3734 / 2N3735
•
•
Hermetic TO-39 Metal Package
General purpose amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
Symbols
VCBO
VCEO
VEBO
IC
PD
PD
TJ
Tstg
Parameters
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current – Continuous
(TC = 25°C)
Total Power Dissipation at TA = 25°C
De-rate Above 25°C
Total Power Dissipation atTC = 25°C
De-rate Above 25°C
Junction Temperature Range
Storage Temperature Range
2N3734
2N3734
50V
30V
2N3735
2N3735
75V
50V
5V
1.5A
1.0W
5.7mW/°C
2.9W
16.6mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJA
R
θJC
Parameters
Thermal Resistance, Junction To Ambient
Thermal Resistance, Junction To Case
Max.
175
60
Units
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Semelab Limited
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email:
sales@semelab-tt.com
Document Number 9588
Issue 1
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GENERAL PURPOSE SILICON
NPN TRANSISTOR
2N3734, 2N3735
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols
V(BR)CEO
(1)
Parameters
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Test Conditions
IC = 10mA
IB = 0
IC = 10µA
IE = 0
IE = 10µA
VCE = 25V
2N3734
2N3735
2N3734
2N3735
IC = 0
2N3734
TA = 100°C
2N3735
TA = 100°C
VCE = 1.0V
VCE = 1.0V
VCE = 1.0V
2N3734
2N3735
2N3734
2N3735
IB = 1.0mA
IB = 15mA
IB = 50mA
IB = 100mA
IB = 1.0mA
IB = 15mA
IB = 50mA
IB = 100mA
Min.
30
50
50
75
5.0
Typ.
Max.
Units
V(BR)CBO
V(BR)EBO
(1)
V
(1)
0.2
20
0.2
20
35
40
35
20
20
20
20
0.2
0.3
0.5
0.9
0.8
1.0
1.2
0.9
1.4
V
120
80
µA
ICEX
Collector Cut-Off Current
VBE = -2V
VCE = 40V
VBE = -2V
IC = 10mA
IC = 150mA
IC = 500mA
hFE
(1)
Forward-current transfer
ratio
IC = 1.0A
VCE = 1.5V
IC = 1.5A
VCE = 5V
IC = 10mA
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage
IC = 150mA
IC = 500mA
IC = 1.0A
IC = 10mA
VBE(sat)
(1)
Base-Emitter Saturation
Voltage
IC = 150mA
IC = 500mA
IC = 1.0A
Notes
(1) Pulse Width
≤
380us,
δ ≤
2%
(2) By design only, not a production test.
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Semelab Limited
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 9588
Issue 1
Page 2 of 3
GENERAL PURPOSE SILICON
NPN TRANSISTOR
2N3734, 2N3735
DYNAMIC CHARACTERISTICS
| hfe |
Magnitude of Common-
Emitter Small-Signal Short-
Circuit forward Current,
Transfer Ratio
Output Capacitance
IC = 50mA
f = 100MHz
VCB = 10V
f = 1.0MHz
VEB = 0.5V
f = 1.0MHz
IC = 1.0A
IB1 = 100mA
IC = 1.0A
VCC = 30V
IB1 = - IB2 = 100mA
8.51 (0.34)
9.40 (0.37)
VCE = 10V
2.5
IE = 0
IC = 0
VCC = 30V
Cobo
Cibo
ton
toff
9
pF
Input Capacitance
80
pF
Turn-On Time
40
ns
60
Turn-Off Time
MECHANICAL DATA
Dimensions in mm (inches)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
2
1
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
3
45°
TO-39 (TO-205AD) METAL PACKAGE
Underside View
Pin 1 - Emitter
Pin 2 - Base
Pin 3 - Collector
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Semelab Limited
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 9588
Issue 1
Page 3 of 3
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