2N4167-2N4174
High-reliability discrete products
and engineering services since 1977
FEATURES
•
•
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS
(Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
SILICON CONTROLLED RECTIFIERS
MAXIMUM RATINGS
Rating
Peak repetitive forward and reverse blocking voltage
2N4167
2N4168
2N4169
2N4170
2N4172
2N4174
Forward current RMS
Peak forward surge current
(one cycle, 60Hz, T
J
= -40 to +100°C)
Circuit fusing (t = 8.3ms)
Peak gate power
Average gate power
Peak gate current
Peak gate voltage
Operating temperature range
Storage temperature range
Stud torque
Symbol
Value
25
50
100
200
400
600
8
100
40
5
0.5
2
10
-40 to +100
-40 to +150
15
Unit
V
DRM
, V
RRM
V
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
stg
A
A
A
2
s
W
W
A
V
°C
°C
In. lb.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
R
ӨJC
Typ.
1.5
Max
2.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Characteristic
Peak forward or reverse blocking current
(Rated V
DRM
or V
RRM
, gate open)
T
C
= 25°C
T
C
= 100°C
Gate trigger current
(continuous dc)
(V
D
= 7V, R
L
= 100Ω)
(V
D
= 7V, R
L
= 100Ω, T
C
= -40°C)
Gate trigger voltage
(continuous dc)
(V
D
= 7V, R
L
= 100Ω)
(V
D
= 7V, R
L
= 100Ω, T
C
= -40°C)
(V
D
= 7V, R
L
= 100Ω, T
C
= 100°C)
Forward “on” voltage
(pulsed, 1ms max., duty cycle ≤ 1%)
(I
TM
= 15.7A)
Symbol
Min
Typ
Max
Unit
I
DRM
, I
RRM
-
-
-
-
-
-
0.2
-
-
-
10
-
0.75
-
-
1.4
10
2
30
60
1.5
2.5
-
2
µA
mA
mA
I
GT
V
GT
V
V
TM
V
Rev. 20130108
2N4167-2N4174
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Characteristic
Holding current
(V
D
= 7V, gate open)
(V
D
= 7V, gate open, T
C
= -40°C)
Turn-on time
(t
d
+t
r
)
(I
G
= 20mA, IF = 5A, V
D
= rated V
DRM
)
Turn-off time
(I
F
= 5A, I
R
= 5A)
(I
F
= 5A, I
R
= 5A, T
C
= 100°C, V
D
= rated V
DRM
)
(dv/dt = 30V/µs)
Forward voltage application rate
(exponential)
(Gate open, T
C
= 100°C, V
D
= rated V
DRM
)
Symbol
I
H
-
-
t
on
-
t
off
-
-
dv/dt
-
50
-
15
25
-
-
V/µs
1
-
µs
10
-
30
60
µs
Min
Typ
Max
Unit
mA
MECHANICAL CHARACTERISTICS
Case:
Marking:
Pin out:
TO-64
Alpha-Numeric
See below
Rev. 20130108
2N4167-2N4174
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
Rev. 20130108
2N4167-2N4174
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
Rev. 20130108
Electronics Design Contest
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