HB52R649E1U-B6B datasheet, PDF

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HB52R649E1U-B6B: Description512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM; Categorystorage storage; File Size148KB，20 Pages; ManufacturerELPIDA; Websitehttp://www.elpida.com/en

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HB52R649E1U-B6B Overview

512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM

HB52R649E1U-B6B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ELPIDA
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	6.9 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	4831838208 bi
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	72
Humidity sensitivity level	1
Number of functions	1
Number of ports	1
Number of terminals	168
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	55 °C
Minimum operating temperature
organize	64MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum standby current	0.546 A
Maximum slew rate	4.47 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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HB52R649E1U-A6B/B6B

512 MB Registered SDRAM DIMM

64-Mword

72-bit, 100 MHz Memory Bus, 1-Bank Module

(18 pcs of 64 M

4 Components)

PC100 SDRAM

Description

Features

E0022H10 (1st edition)

(Previous ADE-203-1192A (Z))

Preliminary

Jan. 31, 2001

The HB52R649E1U belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed

as an optimized main memory solution for 8-byte processor applications. The HB52R649E1U is a 64M

1-bank Synchronous Dynamic RAM Registered Module, mounted 18 pieces of 256-Mbit SDRAM

(HM5225405BTB) sealed in TCP package, 1 piece of PLL clock driver, 2 pieces of register driver and 1 piece

of serial EEPROM (2-kbit) for Presence Detect (PD). An outline of the HB52R649E1U is 168-pin socket

type package (dual lead out). Therefore, the HB52R649E1U makes high density mounting possible without

surface mount technology. The HB52R649E1U provides common data inputs and outputs. Decoupling

capacitors are mounted beside each TCP on the module board.

Note: Do not push the cover or drop the modules in order to protect from mechanical defects, which would

be electrical defects.

•

Fully compatible with : JEDEC standard outline 8-byte DIMM

: Intel PCB Reference design (Rev.1.2)

•

168-pin socket type package (dual lead out)



Outline: 133.35 mm (Length)

30.48 mm (Height)

4.80 mm (Thickness)



Lead pitch: 1.27 mm

•

3.3 V power supply

•

Clock frequency: 100 MHz (max)

•

LVTTL interface

•

Data bus width:

72 ECC

•

Single pulsed

RAS

•

4 Banks can operates simultaneously and independently

Preliminary: The Specifications of this device are subject to change without notice. Please contact to your

nearest Elpida Memory, Inc. regarding specifications.

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

HB52R649E1U-B6B Related Products

	HB52R649E1U-B6B	HB52R649E1U-A6B
Description	512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM	512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM
Is it Rohs certified?	incompatible	incompatible
Maker	ELPIDA	ELPIDA
Parts packaging code	DIMM	DIMM
package instruction	DIMM, DIMM168	DIMM, DIMM168
Contacts	168	168
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
access mode	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
Maximum access time	6.9 ns	6.9 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz	100 MHz
I/O type	COMMON	COMMON
JESD-30 code	R-XDMA-N168	R-XDMA-N168
memory density	4831838208 bi	4831838208 bi
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	72	72
Humidity sensitivity level	1	1
Number of functions	1	1
Number of ports	1	1
Number of terminals	168	168
word count	67108864 words	67108864 words
character code	64000000	64000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	55 °C	55 °C
organize	64MX72	64MX72
Output characteristics	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM
Encapsulate equivalent code	DIMM168	DIMM168
Package shape	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225	225
power supply	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified
refresh cycle	8192	8192
self refresh	YES	YES
Maximum standby current	0.546 A	0.546 A
Maximum slew rate	4.47 mA	4.47 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V
surface mount	NO	NO
technology	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED

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