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S-L2SC2412KQLT3G

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size121KB,4 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet Parametric Compare View All

S-L2SC2412KQLT3G Overview

Small Signal Bipolar Transistor,

S-L2SC2412KQLT3G Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
Marking
Shipping
L2SC2412KQLT1G
Series
L2SC2412KQLT1G
Series
L2SC2412KQLT1G
S-L2SC2412KQLT1G
L2SC2412KQLT3G
S-L2SC2412KQLT3G
L2SC2412KRLT1G
S-L2SC2412KRLT1G
L2SC2412KRLT3G
S-L2SC2412KRLT3G
L2SC2412KSLT1G
S-L2SC2412KSLT1G
L2SC2412KSLT3G
S-L2SC2412KSLT3G
BQ
BQ
BR
BR
G1F
G1F
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
2
1
3
SOT– 23
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CEO
V
CBO
V
EBO
Value
50
60
7.0
150
0.2
150
-55 ~+150
Unit
V
V
V
mAdc
W
°C
°C
2
EMITTER
1
BASE
3
COLLECTOR
I
C
P
C
T
j
T
stg
DEVICE MARKING
L2SC2412KQLT1G =BQ L2SC2412KRLT1G =BR L2SC2412KSLT1G =G1F
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(I
C
= 1 mA)
Emitter–Base Breakdown Voltage
(I
E
= 50
µA)
Collector–Base Breakdown Voltage
(I
C
= 50
µA)
Collector Cutoff Current
(V
CB
= 60 V)
Emitter cutoff current
(V
EB
= 7 V)
Collector-emitter saturation voltage
(I
C
/ I
B
= 50 mA / 5m A)
DC current transfer ratio
(V
CE
= 6 V, I
C
= 1mA)
Transition frequency
(V
CE
= 12 V, I
E
= – 2mA, f =30MHz )
Output capacitance
(V
CB
= 12 V, I
E
= 0A, f =1MHz )
Symbol
V
V
V
(BR)CEO
Min
50
7
60
120
Typ
––
180
2.0
Max
0.1
0.1
0.4
560
––
3.5
Unit
V
V
V
µA
µA
V
––
MHz
pF
(BR)EBO
(BR)CBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
ob
h
FE
values are classified as follows:
hFE
*
Q
120~270
R
180~390
S
270~560
Rev.O 1/4

S-L2SC2412KQLT3G Related Products

S-L2SC2412KQLT3G S-L2SC2412KQLT1G S-L2SC2412KSLT1G S-L2SC2412KSLT3G S-L2SC2412KRLT1G S-L2SC2412KRLT3G
Description Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor,
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Base Number Matches 1 1 1 1 1 1
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