2SC5606-A-YFB datasheet, PDF - EEWORLD Datasheet

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2SC5606-A-YFB: DescriptionRF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size67KB，7 Pages; ManufacturerNEC Electronics

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2SC5606-A-YFB Overview

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN

2SC5606-A-YFB Parametric

Parameter Name	Attribute value
package instruction	LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN
Reach Compliance Code	unknown
Maximum collector current (IC)	0.035 A
Collector-based maximum capacity	0.3 pF
Collector-emitter maximum voltage	3.3 V
Configuration	SINGLE
highest frequency band	L BAND
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	21000 MHz
Base Number Matches	1

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DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5606

NPN SILICON RF TRANSISTOR FOR

LOW NOISE · HIGH-GAIN AMPLIFICATION

3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

FEATURES

• Suitable for high-frequency oscillation

• f

= 25 GHz technology adopted

• 3-pin ultra super minimold (19, 1608 PKG) package

<R>

ORDERING INFORMATION

Part Number

2SC5606

2SC5606-T1

Order Number

2SC5606-A

2SC5606-T1-A

Package

3-pin ultra super minimold

(19, 1608 PKG) (Pb-Free)

Quantity

50 pcs (Non reel)

3 kpcs/reel

Supplying Form

• 8 mm wide embossed taping

• Pin 3 (collector) face the perforation side of

the tape

Remark

To order evaluation samples, please contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T

= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

Symbol

CBO

CEO

EBO

tot

Note

Ratings

3.3

1.5

115

150

−65

to +150

Unit

°C

stg

Note

Mounted on 1.08 cm

1.0 mm (t) glass epoxy substrate

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. PU10781EJ01V0DS (1st edition)

(Previous No. P14658EJ3V0DS00)

Date Published August 2009 NS

Printed in Japan

The mark <R> shows major revised points.

1999, 2009

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

2SC5606-A-YFB Related Products

	2SC5606-A-YFB	2SC5606-T1-A	2SC5606-T1FB-A	2SC5606-T1YFB-A	2SC5606-A-FB	2SC5606-A
Description	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN
package instruction	LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN	LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN	SMALL OUTLINE, R-PDSO-G3	LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN	LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN	LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN
Reach Compliance Code	unknown	unknown	compliant	unknown	unknown	unknown
Maximum collector current (IC)	0.035 A	0.035 A	0.035 A	0.035 A	0.035 A	0.035 A
Collector-based maximum capacity	0.3 pF	0.3 pF	0.3 pF	0.3 pF	0.3 pF	0.3 pF
Collector-emitter maximum voltage	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
highest frequency band	L BAND	L BAND	L BAND	L BAND	L BAND	L BAND
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	21000 MHz	21000 MHz	21000 MHz	21000 MHz	21000 MHz	21000 MHz
Base Number Matches	1	1	1	1	1	1

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