2SC4228-T1R43 datasheet, PDF - EEWORLD Datasheet

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2SC4228-T1R43: DescriptionRF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SC-70, SUPERMINI-3; CategoryDiscrete semiconductor The transistor; File Size51KB，8 Pages; ManufacturerNEC Electronics

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2SC4228-T1R43 Overview

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SC-70, SUPERMINI-3

2SC4228-T1R43 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	NEC Electronics
Parts packaging code	SC-70
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.035 A
Collector-based maximum capacity	0.7 pF
Collector-emitter maximum voltage	10 V
Configuration	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	8000 MHz
Base Number Matches	1

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DATA SHEET

SILICON TRANSISTOR

2SC4228

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

SUPER MINI MOLD

DESCRIPTION

The 2SC4228 is a low supply voltage transistor designed for VHF,

UHF low noise amplifier.

It is suitable for a high density surface mount assembly since the

transistor has been applied super mini mold package.

This is achieved by direct nitride passivated base surface process

(NESAT

process) which is an NEC proprietary fabrication technique.

PACKAGE DIMENSIONS

in millimeters

2.1 ± 0.1

1.25 ± 0.1

2.0 ± 0.2

+0.1

0.3

–0

0.65 0.65

+0.1

0.3

–0

FEATURES

• High f

• Low C

: 8.0 GHz TYP. (@ V

= 3 V, I

= 5 mA, f = 2 GHz)

: 0.3 pF TYP. (@ V

= 3 V, I

= 0, f = 1 MHz)

• High |S

21e

: 7.5 dB TYP. (@ V

= 3 V, I

= 5 mA, f = 2 GHz)

• Super Mini Mold Package. (EIAJ: SC-70)

Marking

0.9 ± 0.1

ORDERING INFORMATION

PART

NUMBER

2SC4228-T1

0.3

QUANTITY

3 kpcs/Reel.

PACKING STYLE

Embossed tape 8 mm wide.

Pin3 (Collector) face to perforation side

of the tape.

Embossed tape 8 mm wide.

Pin1 (Emitter), Pin2 (Base) face to

perforation side of the tape.

2SC4228-T2

3 kpcs/Reel.

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4228)

Document No. P10372EJ2V0DS00 (2nd edition)

(Previous No. TC-2404)

Date Published July 1995 P

Printed in Japan

0 to 0.1

0.15

+0.1

–0.05

1993

2SC4228-T1R43 Related Products

	2SC4228-T1R43	2SC4228-T1R44	2SC4228-T2R44	2SC4228-T2R43	2SC4228-T1R45	2SC4228-T2R45	2SC4228-T1	2SC4228-T2
Description	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SC-70, SUPERMINI-3	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SC-70, SUPERMINI-3	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SC-70, SUPERMINI-3	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SC-70, SUPERMINI-3	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SC-70, SUPERMINI-3	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SC-70, SUPERMINI-3	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SC-70, SUPERMINI-3	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SC-70, SUPERMINI-3
Maker	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics
Parts packaging code	SC-70	SC-70	SC-70	SC-70	SC-70	SC-70	SC-70	SC-70
package instruction	SMALL OUTLINE, R-PDSO-G3	SUPER MINIMOLD, SC-70, 3 PIN	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3	3	3	3	3
Reach Compliance Code	compliant	compliant	unknown	unknown	compliant	unknown	compliant	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.035 A	0.035 A	0.035 A	0.035 A	0.035 A	0.035 A	0.035 A	0.035 A
Collector-based maximum capacity	0.7 pF	0.7 pF	0.7 pF	0.7 pF	0.7 pF	0.7 pF	0.7 pF	0.7 pF
Collector-emitter maximum voltage	10 V	10 V	10 V	10 V	10 V	10 V	10 V	10 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	8000 MHz	8000 MHz	8000 MHz	8000 MHz	8000 MHz	8000 MHz	8000 MHz	8000 MHz
Base Number Matches	1	-	1	1	1	1	1	1

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