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2N1871A

Description
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 60; Max TMS Bridge Input Voltage: 1.25; Max DC Reverse Voltage: 0.01; Capacitance: 5; Package: TO-9
CategoryAnalog mixed-signal IC    Trigger device   
File Size2MB,5 Pages
ManufacturerDigitron
Websitehttp://www.digitroncorp.com
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2N1871A Overview

Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 60; Max TMS Bridge Input Voltage: 1.25; Max DC Reverse Voltage: 0.01; Capacitance: 5; Package: TO-9

2N1871A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknown
Base Number Matches1
High-reliability discrete products
and engineering services since 1977
FEATURES
2N1870A-2N1874A
SILICON CONTROLLED RECTFIERS
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Ratings
Repetitive peak off state voltage
Repetitive peak reverse voltage
DC on state current
100°C ambient
100°C case
Repetitive peak on state current
Peak one cycle surge (non-repetitive) on state
current
Peak gate current
Average gate current
Reverse gate voltage
Thermal resistance, junction to case
Operating and storage temperature range
Symbol
V
DRM
V
RRM
I
T
I
TRM
I
TSM
I
GM
I
G(AV)
V
GR
R
ӨJC
T
J
, T
stg
2N1870A
30
30
2N1871A
60
60
2N1872A
100
100
250
1.25
Up to 30
15
250
25
5
20
-65 to 150
2N1873A
150
150
2N1874A
200
200
Unit
V
V
mA
A
A
A
mA
mA
V
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Test
25°C tests
Off-state current
Reverse current
Gate trigger voltage
Gate trigger current
On-state voltage
Off-state voltage – critical rate of rise
Reverse gate current
Holding current
125°C tests
High temperature off state current
High temperature reverse current
High temperature gate non-trigger voltage
High temperature holding current
-65 °C tests
Low temperature gate trigger voltage
Low temperature gate trigger current
Low temperature holding current
V
GT
I
GT
I
H
-
-
-
-
-
-
1.0
500
15
V
µA
mA
R
GK
= 100 ohms, V
D
= 5V
R
GK
> 10K ohms, V
D
= 5V
I
G
= -150µA, V
D
= 5V
I
DRM
I
RRM
V
GD
I
H
-
-
0.2
0.2
15
15
-
-
100
100
-
-
µA
µA
V
mA
R
GK
= 1K, V
DRM
= + rating
R
GK
= 1K, V
RRM
= - rating
R
GS
= 100 ohms, V
D
= 5V
I
G
= -150µA, V
D
= 5V
I
DRM
I
RRM
V
GT
I
GT
V
TM
dv
c
/dt
I
GR
I
H
-
-
0.4
-
-
100
-
0.3
0.5
0.5
0.55
30
1.8
-
0.5
-
10
10
0.8
200
2.5
-
10
5.0
µA
µA
V
µA
V
V/µs
µA
mA
R
GK
= 1K, V
DRM
= +rating
R
GK
= 1K, V
RRM
= - rating
R
GS
= 100ohms, V
D
= 5V
R
GS
> 10K ohms, V
D
= 5V
I
TM
= 2A (pulse test)
Specified test circuit
V
GRM
= 5V, anode open
I
G
= -150µA, V
D
= 5V
Symbol
Min.
Typ.
Max.
Units
Test Conditions
Voltage ratings apply over the full operating temperature range provided the gate is connected to the cathode through a resistor, 1K or smaller, or other adequate gate bias is used.
Rev. 20130116

2N1871A Related Products

2N1871A 2N1872A 2N1874A 2N1870A 2N1873A
Description Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 60; Max TMS Bridge Input Voltage: 1.25; Max DC Reverse Voltage: 0.01; Capacitance: 5; Package: TO-9 Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 100; Max TMS Bridge Input Voltage: 1.25; Max DC Reverse Voltage: 0.01; Capacitance: 5; Package: TO-9 Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 200; Max TMS Bridge Input Voltage: 1.25; Max DC Reverse Voltage: 0.01; Capacitance: 5; Package: TO-9 Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 30; Max TMS Bridge Input Voltage: 1.25; Max DC Reverse Voltage: 0.01; Capacitance: 5; Package: TO-9 Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 150; Max TMS Bridge Input Voltage: 1.25; Max DC Reverse Voltage: 0.01; Capacitance: 5; Package: TO-9
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code unknown unknown unknown unknown unknown
Base Number Matches 1 1 1 1 1
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