JANTX2N6051 datasheet, PDF - EEWORLD Datasheet

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JANTX2N6051: DescriptionPower Bipolar Transistor, 12A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size79KB，15 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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JANTX2N6051 Overview

Power Bipolar Transistor, 12A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

JANTX2N6051 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
Parts packaging code	TO-204AA
package instruction	FLANGE MOUNT, O-MBFM-P2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	12 A
Collector-emitter maximum voltage	80 V
Configuration	DARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	150
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	150 W
Certification status	Not Qualified
Guideline	MIL-19500/501C
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	4 MHz
Base Number Matches	1

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The documentation process conversion

measures necessary to comply with this

revision shall be completed by 23 August 1997

INCH POUND

MIL-PRF-19500/501C

23 May 1997

SUPERSEDING

MIL-S-19500/501B

25 March 1995

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER

TYPE 2N6051, 2N6052 JAN, JANTX, AND JANTXV

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNP, Darlington, silicon, power transistors. Three levels of

product assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (TO-3).

1.3 Maximum ratings.

| VCBO

| TC = +25°C | TC = +100°C |

| W

| V dc

| 2N6051 | 150

| 75

| 80

| 2N6052 | 150

| 75

| 100

1/ Derate linearly at 1.00 W/°C above TC > +25°C.

1.4 Primary electrical characteristics.

| Min

| Max

| Min

| Max

| hFE2 1/

| VCE = 3 V dc

| IC = 6 A dc

| 1,000

| 18,000

| hFE3 1/

| VCE = 3 V dc

| IC = 12 A dc

| 150

| hfe

| VCE = 3 V dc

| IC = 5 A dc

| f = 1 kHz

| 1,000

| |hfe|

| VCE = 3 V dc

| IC = 5 A dc

| f = 1 MHz

| 250

| R

θJC

°C/W

| 1.00

| Cobo

| 100 kHz

≤

≥

1 MHz

| VCB = 10 V dc, IE = 0

300

| Pulse response

| ton

| toff

µs

| 2

| 10

| VCEO

| V dc

| 80

| 100

| VEBO | IC

| V dc | A dc

| 5

| 12

| 5

| 12

| IB

| A dc

| 0.2

| Tp and TSTG

°C

| -55 to +175

| VBE(sat)

| IC = 12 A dc

| IB = 120 mA dc 1/

| V dc

4.0

| VCE(sat)1

| IC = 12 A dc

| IB = 120 mA dc 1/

| V dc

3.0

| VCE(sat)2

| IC = 6 A dc

| IB = 24 mA dc 1/

| V dc

2.0

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH

43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or

by letter.

1/ Pulsed, see 4.5.1

AMSC N/A

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

FSC 5961

MIL-PRF-1900/501C

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include

documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has

been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements

documents cited in sections 3 and 4 of this specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document

to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department

of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-19500 - Semiconductor Devices, General Specification for.

STANDARD

MILITARY

MIL-STD-750 - Test Methods for Semiconductor Devices.

(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Standardization

Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for

related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document,

however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing

on the applicable qualified products list before contract award (see 4.2 and 6.3).

3.2 Associated detail specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified

herein.

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in

MIL-PRF-19500.

3.4 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified on

figure 1 herein

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-STD-750, MIL-PRF-19500, and herein.

3.4 Marking. Marking shall be in accordance with MIL-PRF-19500.

4. QUALITY ASSURANCE PROVISIONS

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

Qualification inspection (see 4.2).

Screening (see 4.3)

Conformance inspection (see 4.4).

JANTX2N6051 Related Products

	JANTX2N6051
Description	Power Bipolar Transistor, 12A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
Parts packaging code	TO-204AA
package instruction	FLANGE MOUNT, O-MBFM-P2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	12 A
Collector-emitter maximum voltage	80 V
Configuration	DARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	150
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	150 W
Certification status	Not Qualified
Guideline	MIL-19500/501C
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	4 MHz
Base Number Matches	1

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