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2N3109

Description
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
CategoryDiscrete semiconductor    The transistor   
File Size1MB,36 Pages
ManufacturerCrimson Semiconductor Inc.
Download Datasheet Parametric View All

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Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,

2N3109 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Maximum collector current (IC)1 A
Collector-based maximum capacity25 pF
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.8 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)70 MHz
Base Number Matches1

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