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GP15D

Description
1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AC
Categorysemiconductor    Discrete semiconductor   
File Size38KB,3 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
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GP15D Overview

1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AC

Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
GP15A
THRU
GP15M
1.5 Amp Glass
Passivated Junction
Rectifiers
50 to 1000 Volts
DO-15
Features
High temperature metallurgically bonded construction
Glass passivated cavity-free junction, Plastic Case
1.5 amperes operation at T
A
=55
O
C and with no
thermal runaway.
Typical I
R
less than 0.1uA
Maximum Ratings
Operating Temperature: -55 C to +150 C
Storage Temperature: -55
O
C to +150
O
C
Typical Thermal Resistance: 20
O
C/W Junction to Lead
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
I
F(AV)
I
FSM
Maximum DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
T
A
= 55
O
C
8.3ms, half sine
O
O
Part Number
GP15A
GP15B
GP15D
GP15G
GP15J
GP15K
GP15M
Maximum
RMS Voltage
35V
70V
140V
280V
420V
560V
700V
1.5 A
50A
D
A
Cathode
Mark
B
D
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Maximum Average
Forward Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Reverse
Recovery Time
Typical Junction
Capacitance
C
V
F
1.1V
I
FM
= 1.5A;
DIM
A
B
C
D
INCHES
MIN
.230
.104
.026
1.000
DIMENSIONS
MM
MIN
5.80
2.60
.70
25.40
I
R
5.0uA
200uA
2.0uS
15pF
T
A
= 25
O
C
T
A
= 150
O
C
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
Measured at
1.0MHz,
V
R
=4.0V
MAX
.300
.140
.034
---
MAX
7.60
3.60
.90
---
NOTE
T
rr
C
J
www.cnelectr.com

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Description 1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AC 1.5 A, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-204AC 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-204AC 1.5 A, SILICON, RECTIFIER DIODE 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC 1.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-204AC
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