DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4091
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4091 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
•
Low on-state resistance
R
DS(on)1
= 13.0 mΩ MAX. (V
GS
= 10 V, I
D
= 15 A)
R
DS(on)2
= 21 mΩ MAX. (V
GS
= 4.5 V, I
D
= 15 A)
•
Low gate to drain charge
Q
GD
= 2.2 nC TYP. (V
DD
= 15 V, I
D
= 30 A)
•
4.5 V drive available
•
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
2SK4091(1)-S27-AY
2SK4091-ZK-E1-AY
2SK4091-ZK-E2-AY
Note
Note
Note
LEAD PLATING
PACKING
Tube 75 p/tube
PACKAGE
TO-251 (MP-3-b) typ. 0.34 g
TO-252 (MP-3ZK) typ. 0.27 g
Pure Sn (Tin)
Tape 2500 p/reel
Note
Pb-free (This product does not contain Pb in external electrode).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
(TO-251)
30
±20
±30
±110
21
1.0
150
−55
to
+150
18
32.4
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V, L = 0.1 mH
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18635EJ1V0DS00 (1st edition)
Date Published February 2007 NS CP(K)
Printed in Japan
2007
2SK4091
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 30 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= 10 V, I
D
= 15 A
V
GS
= 10 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 10 V,
V
GS
= 0 V,
f = 1 MHz
V
DD
= 15 V, I
D
= 30 A,
V
GS
= 10 V,
R
G
= 3
Ω
MIN.
TYP.
MAX.
10
±100
UNIT
μ
A
nA
V
S
1.5
7
2.0
14
9.8
13.6
920
240
78
7.5
3.9
26
4.8
2.5
Drain to Source On-state Resistance
13.0
21
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G1
Q
G2
V
DD
= 15 V, V
GS
= 10 V, I
D
= 30 A
V
DD
= 15 V, V
GS
= 4.5 V, I
D
= 30 A
V
DD
= 15 V, I
D
= 30 A
15
6.7
2.6
2.2
1.6
Gate to Source Charge
Gate to Drain Charge
Gate Resistance
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
Q
GS
Q
GD
R
G
V
F(S-D)
t
rr
Q
rr
I
F
= 30 A, V
GS
= 0 V
I
F
= 30 A, V
GS
= 0 V,
di/dt = 100 A/
μ
s
0.9
25
16
1.5
V
ns
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
τ
Starting T
ch
τ
= 1
μ
s
Duty Cycle
≤
1%
V
DS
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L
V
DD
PG.
D.U.T.
R
L
V
GS
V
GS
R
G
Wave Form
50
Ω
0
10%
V
GS
90%
V
DD
V
DS
90%
90%
10%
10%
I
AS
I
D
V
DD
V
DS
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D18635EJ1V0DS
2SK4091
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25
P
T
- Total Power Dissipation - W
dT - Percentage of Rated Power - %
100
80
60
40
20
0
0
25
50
75
100
125
150
20
15
10
5
0
0
25
50
75
100
125
150
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
T
C
- Case Temperature -
°C
DRAIN CURRENT vs. CASE TEMPERATURE
1000
I
D(pulse)
I
D(DC)
1
i
40
I
D
- Drain Current - A
=1
i
m
i
s
00
μ
s
10
R
DS(on)
Limited
(V
GS
= 10 V)
Po
w
1
i
0
er
D
is
si
p
m
I
D
- Drain Current - A
100
PW
30
i
s
20
at
io
1
T
c
= 25°C
Single pulse
n
Li
m
it e
d
10
0.1
0
1
10
100
0
25
50
75
100
125
150
T
C
- Case Temperature -
°C
0.1
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
100
R
th(ch-A)
= 125°C/Wi
10
R
th(ch-C)
= 5.95°C/Wi
1
Single pulse
0.1
100
μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width – s
Data Sheet D18635EJ1V0DS
3
2SK4091
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
150
V
GS
= 10 V
100
100
10
I
D
- Drain Current - A
V
DS
= 10 V
Pulsed
T
ch
=
−55°C
−25°C
25°C
75°C
125°C
150°C
I
D
- Drain Current - A
1
0.1
0.01
0.001
50
4.5 V
Pulsed
0
0
1
2
3
V
DS
- Drain to Source Voltage - V
0
1
2
3
4
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
– Gate to Source Cut-off Voltage - V
| y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
2.5
2
1.5
1
0.5
0
-75
-25
25
75
125
175
T
ch
- Channel Temperature -
°C
100
V
DS
= 10 V
Pulsed
10
T
ch
=
−
55
°
C
−
25
°
C
1
V
DS
= V
GS
I
D
= 250
μA
25
°
C
75
°
C
125
°
C
150
°
C
0.1
0.1
1
10
100
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
30
I
D
= 30 A
15 A
6A
Pulsed
30
20
20
V
GS
= 4.5 V
10
10 V
Pulsed
0
1
10
100
1000
I
D
- Drain Current - A
10
0
0
5
10
15
20
V
GS
– Gate to Source Voltage - V
4
Data Sheet D18635EJ1V0DS
2SK4091
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
C
iss
, C
oss
, C
rss
- Capacitance - pF
30
25
20
15
10
5
0
-75
-25
25
75
125
175
10 V
I
D
= 15 A
Pulsed
V
GS
= 4.5 V
1000
C
iss
C
oss
100
V
GS
= 0 V
f = 1 MHz
10
0.1
1
10
100
C
rss
T
ch
- Channel Temperature -
°
C
V
DS
- Drain to Source Voltage – V
SWITCHING CHARACTERISTICS
100
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DS
– Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
12
V
DD
= 24 V
15 V
6V
10
8
6
V
GS
10
4
2
I
D
= 30 A
0
0
10
20
V
GS
– Gate to Source Voltage - V
t
d(off)
t
f
10
t
d(on)
20
t
r
V
DD
= 15 V
V
GS
= 10 V
R
G
= 3
Ω
0.1
1
10
100
V
DS
0
1
I
D
- Drain Current - A
Q
G
– Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
I
F
– Diode Forward Current - A
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
100
10
1
0.1
10 V
V
GS
= 4.5 V
0V
t
rr
– Reverse Recovery Time - ns
10
Pulsed
0.01
0
0.5
1
1.5
V
GS
= 0 V
di/dt = 100 A/
μ
s
1
1
10
100
V
F(S-D)
– Source to Drain Voltage - V
I
F
– Diode Forward Current - A
Data Sheet D18635EJ1V0DS
5
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