2N6792R1 datasheet, PDF - EEWORLD Datasheet

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2N6792R1: DescriptionPower Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size23KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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2N6792R1 Overview

Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN

2N6792R1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (ID)	2 A
Maximum drain-source on-resistance	1.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF
JESD-30 code	O-MBCY-W3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	10 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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IRFF320

2N6792

MECHANICAL DATA

Dimensions in mm (inches)

8.64 (0.34)

9.40 (0.37)

8.01 (0.315)

9.01 (0.355)

N-CHANNEL ENHANCEMENT

MODE TRANSISTOR

4.06 (0.16)

4.57 (0.18)

12.70

(0.500)

min.

0.89 max.

(0.035)

0.41 (0.016)

0.53 (0.021)

dia.

FEATURES

5.08 (0.200)

typ.

• V

(BR)DSS

= 400V

• I

= 2.0A

• R

DSON

= 1.80Ω

0.74 (0.029)

1.14 (0.045)

0.71 (0.028)

0.53 (0.021)

2.54

(0.100)

45°

TO–39 PACKAGE (TO-205AF)

Underside View

PIN 1 – Source

PIN 2 – Gate

PIN 3 – Drain

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

Drain–Source Voltage

Gate–Source Voltage

Drain Current Continuous T

Case

= 25°C

Case

= 100°C

Drain Current Pulsed

Total Device Dissipation @ T

Case

= 25°C

Case

= 100°C

, T

STG

Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

θJC

Thermal Resistance Junction to Case

θJA

Thermal Resistance Junction to Ambient

Maximum Lead Temperature 1.6mm from Case for

10 secs.

400V

±20V

2.0A

1.25A

10A

20W

–55 to +150°C

6.25°C/W

175°C/W

300°C

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Document Number 6407

Issue 1

2N6792R1 Related Products

	2N6792R1	2N6792	IRFF320	IRFF320R1	IRFF320-JQR-BR1	IRFF320-JQR-B
Description	Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN	Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN	Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN	Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN	Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN	Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN
Is it Rohs certified?	conform to	incompatible	incompatible	conform to	conform to	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V	400 V	400 V	400 V	400 V	400 V
Maximum drain current (ID)	2 A	2 A	2 A	2 A	2 A	2 A
Maximum drain-source on-resistance	1.8 Ω	1.8 Ω	1.8 Ω	1.8 Ω	1.8 Ω	1.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF	TO-205AF	TO-205AF	TO-205AF	TO-205AF	TO-205AF
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	10 A	10 A	10 A	10 A	10 A	10 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	-	TT Electronics plc	TT Electronics plc	TT Electronics plc	TT Electronics plc	TT Electronics plc

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