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2N6506-DW

Description
Silicon Controlled Rectifier, 25A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-220AB
CategoryAnalog mixed-signal IC    Trigger device   
File Size115KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

2N6506-DW Overview

Silicon Controlled Rectifier, 25A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-220AB

2N6506-DW Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionANODE
Nominal circuit commutation break time15 µs
ConfigurationSINGLE
Maximum DC gate trigger current40 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current40 mA
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum rms on-state current25 A
Maximum repetitive peak off-state leakage current10 µA
Off-state repetitive peak voltage200 V
Repeated peak reverse voltage200 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Trigger device typeSCR
Base Number Matches1
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