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GBU4D

Description
2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size143KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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GBU4D Overview

2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

GBU4D Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Maximum average input current2.8 A
Processing package description20.80 × 18 MM, 3.30 MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage200 V
Maximum non-repetitive peak forward current200 A
GBU4A ~ GBU4M
Elektronische Bauelemente
VOLTAGE 50V ~ 1000V
4.0
AMP Glass Passivated Bridge Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen-free.
GBU
FEATURES
* Ideal For Printed Circuit Board
* Surge Overload Rating -150 Amp Peak
* Reliable Low Cost Construction Utilizing
Molded Plastic Technique
* Plastic Material Has U/L Flammability
Classification 94V-0
* Mounting Position: Any
3.2x3.2
CHAMFER
.139(3.53)
.133(3.37)
.874(22.2)
.860(21.8)
.160(4.1)
.140(3.5)
5
TYP
O
O
10
TYP
.752(19.1)
.720(18.3)
.083(2.1)
.067(1.7)
.232(5.9)
.224(5.7)
.720(18.29)
.680(17.27)
.100(2.54)
.085(2.16)
.080(2.03)
.068(1.65)
.083(2.1)
.075(1.9)
.022(0.56)
.018(0.46)
.210
.210
.190
.190
(5.33) (5.33)
(4.83) (4.83)
.210
.190
(5.33)
(4.83)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature unless otherwise specified
.
Resistive or inductive load, 60Hz,
For capacitive load, derate current by 20%.
o
TYPE NUMBER
SYMBOL
GBU4A
GBU4B
GBU4D
GBU4G
GBU4J
GBU4K
GBU4M
UNITS
V
V
V
A
A
V
µA
A
2
S
pF
o
Maximum Recurrent Peak Reverse Voltage
V
RRM
50
Maximum RMS Voltage
V
RMS
30
Maximum DC Blocking Voltage
V
DC
50
Maximum Average Forward
(with heatsink Note2)
I
(AV)
o
Rectified Current @ T
C
=100 C
(without heatsink)
Peak Forward Surge Current, 8.3 ms single
I
FSM
half Sine-wave superimposed
on rated load (JEDEC method)
Maximum Forward Voltage at 2.0A
V
F
o
Maximum DC Reverse Current Ta=25 C
I
R
at Rated DC Blocking Voltage Ta=125
o
C
I
2
t Rating for fusing (t<8.3ms)
I
2
t
Typical Junction Capacitance
C
J
per element (Note1)
Typical Thermal Resistance (Note 2)
JC
Operating Temperature Range
T
J
Storage Temperature Range
T
STG
NOTES:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Device mounted on 50mm x 50mm x 1.6mm Cu Plate Heatsink.
100
70
100
200
140
200
400
280
400
4.0
2.4
150
1.1
10.0
500
93
600
420
600
800
560
800
1000
700
1000
45
2.2
- 55 ~ + 150
- 55 ~ + 150
C /W
o
C
o
C
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2

GBU4D Related Products

GBU4D GBU4M GBU4K GBU4J GBU4G GBU4B GBU4A
Description 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 3 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
state ACTIVE ACTIVE DISCONTINUED TRANSFERRED - ACTIVE -
Diode type bridge rectifier diode bridge rectifier diode bridge rectifier diode bridge rectifier diode - BRIDGE RECTIFIER DIODE -

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