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GBU2510C

Description
SILICON BRIDGE RECTIFIERS
File Size34KB,2 Pages
ManufacturerHY Electronic
Websitehttp://www.hygroup.com.tw
Download Datasheet View All

GBU2510C Overview

SILICON BRIDGE RECTIFIERS

GBU10/15/25(C)SERIES
SILICON BRIDGE RECTIFIERS
REVERSE VOLTAGE
FORWARD CURRENT
- 50
to
1000Volts
- 10/15/25
Amperes
FEATURES
Surge overload rating -240~400 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing
GBU-C
.874(22.2)
.860(21.8)
.154(3.9)
.146(3.7)
.232(5.9)
.224(5.7)
3.2*3.2
CHAMFER
.156(3.95)
.148(3.75)
molded plastic technique
Plastic material has U/L
.752(19.1)
.720(18.3)
.079(2.0)
.063(1.6)
flammability classification 94V-0
Mounting postition:Any
.720(18.29)
.680(17.27)
.047(1.2)
.035(0.9)
.100(2.54)
.085(2.16)
.126(3.2)
.114(2.9)
.080(2.03)
.065(1.65)
.210
.190
(5.3)
(4.8)
.210
.190
(5.3)
(4.8)
.210
.190
(5.3)
(4.8)
.022(.56)
.018(.46)
Dimensions in inches and (milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
GBU
10005C
SYMBOL
15005C
25005C
V
RRM
V
RMS
V
DC
I
(AV)
GBU
10C
I
FSM
V
F
I
R
I
2
t
C
J
R
θJC
T
J
T
STG
50
30
50
GBU
1001C
1501C
2501C
100
70
100
10
3.0
240
1.1
10
500
200
70
2.2
-55 to +125
-55 to +150
GBU
15C
GBU
1002C
1502C
2502C
200
140
200
GBU
1004C
1504C
2504C
400
280
400
15
3.2
300
GBU
25C
GBU
1006C
1506C
2506C
600
420
600
GBU
1008C
1508C
2508C
800
560
800
GBU
1010C
1510C
2510C
1000
700
1000
25
4.2
400
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note 2)
Rectified Current
@ T
C
=100℃ (without heatsink)
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 5.0/7.5/12.5A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I
2
t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance Per Element (Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
@ T
J
=25℃
@ T
J
=125℃
UNIT
V
V
V
A
A
V
uA
A
2
s
pF
℃/W
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 100mm*100mm*1.6mm cu plate heatsink.
~ 287 ~
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