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GBJ610

Description
2.8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size43KB,2 Pages
ManufacturerSIRECTIFIER
Websitehttp://www.sirectifier.com
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GBJ610 Overview

2.8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

GBJ6005 thru GBJ610
Single Phase Bridge Rectifiers
Dimensions GBJ(RS6M)
GBJ6005
GBJ601
GBJ602
GBJ604
GBJ606
GBJ608
GBJ610
V
RRM
V
50
100
200
400
600
800
1000
V
RMS
V
35
70
140
280
420
560
700
V
DC
V
50
100
200
400
600
800
1000
Symbol
I
(AV)
I
FSM
V
F
I
R
I
2
t
C
J
R
OJC
T
J
T
STG
Characteristics
Maximum Average Forward (With Heatsink Note 2)
Rectified Current @T
C
=110
o
C (Without Heatsink)
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Maximum Forward Voltage At 3.0A DC
Maximum DC Reverse Current
At Rated DC Blocking Voltage
I
2
t Rating For Fusing (t < 8.3 ms)
Typical Junction Capacitance Per Element (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
@T
J
=25
o
C
@T
J
=125
o
C
Maximum Ratings
6.0
2.8
170
1.0
5.0
500
120
55
1.8
-55 to +150
-55 to +150
Unit
A
A
V
uA
A
2
S
pF
o
C/W
o
o
C
C
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Device Mounted On 75mm x 75mm x 1.6mm Cu Plate Heatsink.
FEATURES
* Rating to 1000V PRV
* Ideal for printed circuit board
* Low forward voltage drop, high current capability
* Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
MECHANICAL DATA
* Polarity: Symbols molded on body
* Weight: 0.23 ounces, 6.6 grams
* Mounting position: Any

GBJ610 Related Products

GBJ610 GBJ6005 GBJ601 GBJ602 GBJ604 GBJ608 GBJ606
Description 2.8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
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