GBJ2501 datasheet, PDF - EEWORLD Datasheet

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GBJ2501: Description25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size40KB，1 Pages; ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.

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GBJ2501 Overview

25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

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CHONGQING PINGYANG ELECTRONICS CO.,LTD.

GBJ25005 THRU GBJ2510

GLASS PASSIVATED BRIDGE RECTIFIER

VOLTAGE：50-1000V

CURRENT：25.0A

FEATURES

·Low

leakage

·Low

forward voltage

·Surge

overload ratings-350 Amperes

GBJ

1.193(30.3)

1.169(29.7)

HOLE FOR NO.

6 SCREW

.189(4.8)

.173(4.4)

MECHANICAL DATA

·Case:

Molded plastic

·Epoxy:

UL 94V-0 rate flame retardant

·Lead:

MIL-STD- 202E, Method 208 guaranteed

·Polarity:

Symbols molded or marked on body

·Mounting:

Thru hole for 6# screw

·Weight:

6.6 grams

.106(2.7)

.096(2.3)

.094(2.4)

.078(2.0)

.043(1.1)

.035(0.9)

.402(1.1)

.386(0.9)

+ ~ ~ -

.119

(0.5) .800(20.3)

.697(17.7)

.441(11.2)

.425(10.8)

.150(3.8)

.134(3.4)

.184(3.4)

.122(3.1)

.031(0.8)

.023(0.6)

.114(2.9)

.165(4.2) .708(18.0) .098(2.5)

.150(3.8) .669(17.0)

.303(7.7)

.287(7.3)

.303(7.7)

.287(7.3)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL

GBJ

25005

RRM

RMS

FSM

GBJ

2501

100

GBJ GBJ GBJ GBJ

2502 2504 2506 2508

200 400 600 800

140 280 420 560

200 400 600 800

350

1.05

@ T

=125°C

500

510

2.7

°C/W

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

Maximum Average Forward

Current at T

=100°C

rectified Output

GBJ

units

2510

1000

700

1000

µA

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rate load (JEDEC

method)

Maximum Forward Voltage Drop per element at

12.5 A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

per element

@ T

=25°C

t Rating for Fusing (t<8.3ms)

Typical Junction Capacitance per Element(Note

Typical Thermal Resistance, Junction to Case

θJA

(Note 2)

Notes: 1.

Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

2. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink.

１

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GBJ2501 Related Products

	GBJ2501	GBJ2510	GBJ2508	GBJ2506	GBJ2504	GBJ2502	GBJ25005
Description	25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	4.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

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