GBJ2008 datasheet, PDF - EEWORLD Datasheet

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GBJ2008: Description3.6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size46KB，2 Pages; ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.

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3.6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

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Shanghai Lunsure Electronic

Technology Co.,Ltd

Tel:0086-21-37185008

Fax:0086-21-57152769

GBJ20005

THRU

GBJ2010

20 Amp

Glass Passivated

Bridge Rectifier

50 to 1000 Volts

GBJ

I

A

H

Features

Rating to 1000V PRV

Ideal for printed circuit board

Low forward voltage drop, high current capability.

Reliable low cost construction utilizing molded plastic

technique results in inexpensive product

Maximum Ratings

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Device

Marking

Maximum

Reccurrent

Peak Reverse

Voltage

50V

100V

200V

400V

600V

800V

1000V

Maximum

RMS

Voltage

35V

70V

140V

280V

420V

560V

700V

Maximum

DC

Blocking

Voltage

50V

100V

200V

400V

600V

800V

1000V

Catalog

Number

GBJ20005

GBJ2001

GBJ2002

GBJ2004

GBJ2006

GBJ2008

GBJ2010

D

F

B

E

G

---

+

P

L

C

M

N

O

DIMENSIONS

INCHES

MIN

1.170

.780

.670

.019

.430

.090

.120

.130

.170

.100

.020

.080

.040

.390

.290

.150

MM

MIN

29.70

19.70

17.00

4.70

10.80

2.30

3.10

3.40

4.40

2.50

0.60

2.00

0.90

9.80

7.30

3.80

K

J

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

I

F(AV)

20 A

Tc = 100°C

Current

Peak Forward Surge

I

FSM

240A

8.3ms, half sine

Current

Maximum

I

FM

= 10.0 A

1.05V

Instantaneous

V

F

Forward Voltage

T

J

= 25°C

Maximum DC

Reverse Current At

I

R

10 µA

T

J

= 25°C

Rated DC Blocking

500uA T

J

= 125°C

Voltage

Typical thermal

resistance

R

OJC

0.8

°C

/W

Typical Junction

C

J

60 pF

Measured at

Capacitance

1.0MHz, V

R

=4.0V

*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%

DIM

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

MAX

1.190

.800

.710

.019

.440

.110

.130

.150

.190

.110

.030

.090

.040

.400

.300

.170

MAX

30.30

20.30

18.00

4.90

11.20

2.70

3.40

3.80

4.80

2.90

0.80

2.40

1.10

10.20

7.70

4.20

NOTE

www.cnelectr.com

GBJ2008 Related Products

	GBJ2008	GBJ2010	GBJ2006	GBJ2002	GBJ2004	GBJ20005	GBJ2001
Description	3.6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	3.6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	3.6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	3.6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	3.6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	20 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE	20 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

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