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GBJ2004

Description
3.6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size40KB,1 Pages
ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.
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GBJ2004 Overview

3.6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

CHONGQING PINGYANG ELECTRONICS CO.,LTD.
GBJ20005 THRU GBJ2010
GLASS PASSIVATED BRIDGE RECTIFIER
VOLTAGE:50-1000V
CURRENT:20.0A
FEATURES
·Low
leakage
·Low
forward voltage
·Surge
overload ratings-240 Amperes
GBJ
1.193(30.3)
1.169(29.7)
HOLE FOR NO.
6 SCREW
.189(4.8)
.173(4.4)
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL 94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:
Symbols molded or marked on body
·Mounting:
Thru hole for 6# screw
·Weight:
6.6 grams
.106(2.7)
.096(2.3)
.094(2.4)
.078(2.0)
.043(1.1)
.035(0.9)
.402(1.1)
.386(0.9)
+ ~ ~ -
.119
(0.5) .800(20.3)
.697(17.7)
.441(11.2)
.425(10.8)
.150(3.8)
.134(3.4)
.184(3.4)
.122(3.1)
.031(0.8)
.023(0.6)
.114(2.9)
.165(4.2) .708(18.0) .098(2.5)
.150(3.8) .669(17.0)
.303(7.7)
.287(7.3)
.303(7.7)
.287(7.3)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
GBJ
20005
V
RRM
50
V
RMS
35
V
DC
50
I
o
I
FSM
V
F
GBJ
2001
100
70
100
GBJ GBJ GBJ GBJ
2002 2004 2006 2008
200 400 600 800
140 280 420 560
200 400 600 800
20
240
1.1
10
I
R
@ T
A
=125°C
500
240
60
2.7
A
2
S
ec
pF
°C/W
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Current at T
C
=100°C
rectified Output
GBJ
units
2010
1000
V
700
V
1000
V
A
A
V
µA
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Forward Voltage Drop per element at
10.0 A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
per element
@ T
A
=25°C
I
2
t
I
2
t Rating for Fusing (t<8.3ms)
C
J
Typical Junction Capacitance per Element(Note
1)
Typical Thermal Resistance, Junction to Case
R
θJA
(Note 2)
Notes: 1.
Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink.
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GBJ2004 Related Products

GBJ2004 GBJ2010 GBJ2006 GBJ2008 GBJ2002 GBJ2001 GBJ20005
Description 3.6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3.6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 3.6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 3.6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 3.6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 20 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 20 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
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