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5510279A

Description
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
File Size393KB,4 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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5510279A Overview

3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS

注文コード No. N 6 1 2 9
5HN02M
No.
6 1 2 9
62299
5HN02M
特長
・½オン抵抗。
・超高速スイッチング。
・4V 駆動。
N チャネル MOS ½シリコン電界効果トランジスタ
超高速スイッチング用
絶対最大定格
Absolute Maximum Ratings / Ta=25℃
ドレイン・½ース電圧
ゲート・½ース電圧
ドレイン電流(DC)
ドレイン電流(パルス)
許容損失
チャネル温度
保存周囲温度
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW ≦ 10µs, duty cycle ≦ 1%
50
± 20
0.2
0.8
0.15
150
− 55 ∼+ 150
min
50
typ
unit
V
V
A
A
W
max
10
± 10
1
0.22
2.4
0.31
1.8
2.3
22
12
4.6
2.3
3.2
unit
V
µA
µA
V
S
pF
pF
pF
次ページへ続く。
電気的特性
Electrical Characteristics / Ta=25℃
ドレイン・½ース降伏電圧
V(BR)DSS ID=1mA, VGS=0
ドレイン・½ースしゃ断電流 IDSS
VDS=50V, VGS=0
ゲート・½ースもれ電流
IGSS
VGS= ± 16V, VDS=0
ゲート・½ースしゃ断電圧
順伝達アドミタンス
ドレイン・½ース間オン抵抗
入力容量
出力容量
帰還容量
VGS(off)
y
fs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
VDS=10V, ID=100µA
VDS=10V, ID=100mA
ID=100mA, VGS=10V
ID=50mA, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
スイッチングタイム測定回路図
VIN
VIN
VDD=25V
ID=100mA
RL=250Ω
外½図 2158
(unit : mm)
0.425
0.15
0.2
0∼0.1
0.6
0.9
0.3
10V
0V
3
2.1
1.250
PW=10µs
D.C.≦1%
D
G
VOUT
5HN02M
P.G
50Ω
S
0.425
1 2
0.65 0.65
2.0
0.3
1 : Gate
2 : Source
3 : Drain
SANYO : MCP3
〒370-0596 群馬県邑½郡大泉町坂田一丁目1番1号
62299 SI IM ◎祝田 TA-1849
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