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3N259

Description
2A, 1000V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size67KB,2 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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3N259 Overview

2A, 1000V, SILICON, BRIDGE RECTIFIER DIODE

3N259 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionR-PSIP-T4
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PSIP-T4
JESD-609 codee0
Maximum non-repetitive peak forward current60 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature165 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current10 µA
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
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