BSM300GA170DN2S datasheet, PDF

BSM300GA170DN2S: DescriptionInsulated Gate Bipolar Transistor, 300A I(C), 1700V V(BR)CES, N-Channel, SSW SENSE 1, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size73KB，2 Pages; ManufacturerEUPEC [eupec GmbH]

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Insulated Gate Bipolar Transistor, 300A I(C), 1700V V(BR)CES, N-Channel, SSW SENSE 1, 4 PIN

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-XUFM-X5
Reach Compliance Code	unknown
Shell connection	ISOLATED
Maximum collector current (IC)	300 A
Collector-emitter maximum voltage	1700 V
Configuration	SINGLE WITH BUILT-IN DIODE
JESD-30 code	R-XUFM-X5
Number of components	1
Number of terminals	5
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
transistor applications	GENERAL PURPOSE SWITCHING
Transistor component materials	SILICON
Nominal off time (toff)	1390 ns
Nominal on time (ton)	800 ns
Base Number Matches	1

BSM 300 GA 170 DN2 S

Circuit Diagram

Package Outlines

Dimensions in mm

Weight: 420 g

Oct-27-1997

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