5829
SERIAL DATA
OUT
SERIAL DATA
IN
HIGH-SIDE
DRIVER
REFERENCE
9-BIT SERIAL-INPUT,
LATCHED SINK DRIVER
Intended primarily to drive high-current, dot matrix 9- and 24-wire
printer solenoids, the UCN5829EB serial-input, latched sink driver
provides a complete driver function with a minimum external parts
count. Included on chip are constant-frequency PWM current control
for each output driver, a user-defined output enable timeout, current
sensing, and thermal shutdown.
The 9-bit CMOS shift register and latches allow operation with
most microprocessor/LSI-based systems. With a 5 V logic supply,
these BiMOS devices will operate at data input rates greater than 3.3
MHz. The CMOS inputs cause minimum loading and are compatible
with standard CMOS, PMOS, NMOS, and TTL circuits. A CMOS serial
data output allows cascade connections in applications requiring
additional drive lines as required for 24-wire printheads.
The device features nine open-collector Darlington drivers, each
rated at 50 V and 1.6 A. Current-control for each output is provided by
an internal current-sensing resistor and a constant-frequency chopper
circuit. An external high-side driver can be used to optimize print head
performance. It is enabled by an on-chip driver during the output
enable timeout. Internal logic sequencing prevents false output
operation during power up. Other high-current devices for driving dot
matrix printheads are the UDN2961B/W and UDN2962W.
The UCN5829EB is supplied in a 44-lead power PLCC. Its
batwing construction provides for maximum package power dissipation
in a minimum-area, surface-mountable package.
42
STROBE
SUPPLY
44
CLOCK
RC
EN
RC
C
41
R
CV
9
Data Sheet
26185.50
IN
43
GND
7
8
9
10
11
12
13
14
15
16
ONE-SHOT
GND
17
NC
18
ABSOLUTE MAXIMUM RATINGS
Output Current Voltage, V
OUT
............
50 V
Output Current, I
OUT(S)
(Continuous) ................................
1.6 A
(Peak) ............................................
1.8 A
Logic Supply Voltage, V
DD
..................
7.0 V
Input Voltage Range,
V
IN
.......................
-0.3 V to V
DD
+ 0.3 V
Package Power Dissipation,
P
D
........................................
See Graph
Operating Temperature Range,
T
A
..................................
-20
°
C to +85
°
C
Junction Temperature, T
J
...............
+150
°
C*
Storage Temperature Range,
T
S
...............................
-55
°
C to +150
°
C
* Fault conditions that produce excessive junction
temperature will activate device thermal shut-
down circuitry. These conditions can be
tolerated, but should be avoided.
Caution: This CMOS device has input static
protection but is susceptible to damage when
exposed to extremely high static electrical
charges.
T
C
U Y
D L
O N
R O
P E
D C
E N
U E
IN ER
T F
N E
O R
C R
IS O
D F
—
CURRENT
CONTROL
39
38
37
36
35
34
33
32
31
GND
SHIFT REGISTER
LATCHES
30
29
GND
NC
28
25
19
20
21
22
23
OUT
9
24
26
27
NO
CONNECTION
OUT
8
OUT
7
OUT
5
OUT
3
OUT
6
OUT
4
OUT
2
OUT
1
Dwg. PP-028A
V
DD
CLK
NO
CONNECTION
40
5
6
4
3
2
1
FEATURES
s
s
s
s
s
s
s
s
s
s
1.6 A Continuous Output Current
50 V Minimum Sustaining Voltage
Internal Current Sensing
Constant-Frequency PWM Current Control
Control for External High-Side Driver
To 3.3 MHz Data Input Rate
Low-Power CMOS Logic & Latches
Internal Pull-Ups for TTL Compatibility
User-Defined Output Enable Timeout
Internal Thermal Shutdown Circuitry
Always order by complete part number:
UCN5829EB
.
5829
9-BIT SERIAL-INPUT,
LATCHED SINK DRIVER
ELECTRICAL CHARACTERISTICS at T
A
= +25
°
C, V
DD
= 5 V,
in Test Circuit/Typical Application (unless otherwise noted).
Limits
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Chopping Characteristics (T
J
= +25
°
C to +150
°
C) with Fast Clamp Diodes
Enable Timeout
Chopping Frequency
Duty Cycle Range
Chop Current Level
t
EN
f
ch
dc
I
TRIP
R
EN
= 20 kΩ, C
EN
= 0.01
µF
R
C
= 20 kΩ, C
C
= 250 pF
t
on
/ t
on
+ t
off
V
REF
= 2.0 V, f
ch
< 100 kHz
V
REF
= 2.8 V, f
ch
< 100 kHz
Output Current Control Range
V
REF
I
TRIP
Delay
Chop Inhibit Voltage Range
t
d
V
REF
I
TRIP
to I
OUT(P)
, T
A
= +25°C
190
90
15
0.9
1.26
1.0
0.5
—
4.5
200
100
—
1.0
1.4
—
—
300
—
210
110
< 50
1.1
1.54
3.2
1.6
500
V
DD
+ 0.3
µs
kHz
%
A
A
V
A
ns
V
Negative current is defined as coming out of (sourcing) the specified device terminal.
EXTERNAL HIGH-SIDE DRIVERS
NMOS
PMOS
CHARGE-PUMP CIRCUITRY
FOR SINGLE-SUPPLY OPERATION
V
BB
V
BB
+ 10 V
V
BB
V
BB
0.022
µF
10 V
Dwg. EP-028
Dwg. EP-027
Dwg. EP-026
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
51mcu
京公网安备 11010802033920号
EEWORLD
