The UT54ACS279 and the UT54ACTS279 contain four basic
S-R flip-flop latches. Under conventional operation, the S-R
inputs are normally held high. When the S input is pulsed low,
the Q output will be set high. When R is pulsed low, the Q output
will be reset low. If the S-R inputs are taken low simultaneously,
the Q output is unpredictable.
The devices are characterized over full military temperature
range of -55°C to +125°C.
FUNCTION TABLE
INPUTS
S
H
L
H
L
R
H
H
L
L
OUTPUT
Q
Q
0
H
L
H
1
PINOUTS
16-Pin DIP
Top View
1R
1S1
1S2
1Q
2R
2S
2Q
V
SS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
DD
4S
4R
4Q
3S2
3S1
3R
3Q
16-Lead Flatpack
Top View
1R
1S1
1S2
1Q
2R
2S
2Q
V
SS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
DD
4S
4R
4Q
3S2
3S1
3R
3Q
LOGIC SYMBOL
(1)
1R
(2)
1S1
(3)
1S2
(5)
2R
(6)
2S
(10)
3R
(11)
3S1
(12)
3S2
(14)
4R
(15)
4S
Note:
1. This configuration is nonstable. It may not persist when the S and R inputs
return to their inactive (high) level.
R
S1
S1
R
S2
R
S3
S3
R
S4
(4)
1Q
(7)
2Q
LOGIC DIAGRAM
(LATCHES 1 & 3)
R
R
(LATCHES 2 & 4)
(9)
3Q
(13)
4Q
Note:
1. Logic symbol in accordance with ANSI/IEEE standard 91-1984 and IEC
Publication 617-12.
S1
S2
Q
S
Q
1
OPERATIONAL ENVIRONMENT
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
LIMIT
1.0E6
80
120
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
Θ
JC
I
I
P
D
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum power dissipation
LIMIT
-0.3 to 7.0
-.3 to V
DD
+.3
-65 to +150
+175
+300
20
±10
1
UNITS
V
V
°C
°C
°C
°C/W
mA
W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at
these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
4.5 to 5.5
0 to V
DD
-55 to + 125
UNITS
V
V
°C
2
DC ELECTRICAL CHARACTERISTICS
7
(V
DD
= 5.0V
±
10%; V
SS
= 0V
6
, -55°C < T
C
< +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
SYMBOL
V
IL
PARAMETER
Low-level input voltage
1
ACTS
ACS
High-level input voltage
1
ACTS
ACS
Input leakage current
ACTS/ACS
Low-level output voltage
3
ACTS
ACS
High-level output voltage
3
ACTS
ACS
Short-circuit output current
2 ,4
ACTS/ACS
Output current
10
(Sink)
I
OH
Output current
10
(Source)
P
total
I
DDQ
ΔI
DDQ
Power dissipation
2, 8, 9
Quiescent Supply Current
Quiescent Supply Current Delta
ACTS
V
IN
= V
DD
or V
SS
I
OL
= 12.0mA
I
OL
= 100μA
I
OH
= -12.0mA
I
OH
= -100μA
V
O
= V
DD
and V
SS
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
C
L
= 50pF
V
DD
= 5.5V
For input under test
V
IN
= V
DD
- 2.1V
For all other inputs
V
IN
= V
DD
or V
SS
V
DD
= 5.5V
C
IN
C
OUT
Input capacitance
5
Output capacitance
5
ƒ
= 1MHz @ 0V
ƒ
= 1MHz @ 0V
15
15
pF
pF
2.1
10
1.6
mW/
MHz
μA
mA
-12
mA
.7V
DD
V
DD
- 0.25
-300
12
300
.5V
DD
.7V
DD
-1
1
CONDITION
MIN
MAX
0.8
.3V
DD
UNIT
V
V
IH
V
I
IN
V
OL
μA
0.40
0.25
V
V
OH
V
I
OS
I
OL
mA
mA
3
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%, -
50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are
guaranteed to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density
≤
5.0E5 amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765
pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose
≤
1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
4
AC ELECTRICAL CHARACTERISTICS
2
(V
DD
= 5.0V
±10%;
V
SS
= 0V
1
, -55°C < T
C
< +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
Start development with MSP430 LaunchPad : https://training.eeworld.com.cn/course/237This course is based on MSP-EXP430G2 LaunchPad EVM, targeting the entry-level Value Line of MSP430, and is aimed at ...
Abstract: In embedded real-time systems, some strange phenomena often occur due to multi-task resource sharing. This article analyzes what priority inversion is and why it occurs, and proposes two eff...
As the price of digital signal processors (DSPs) drops from hundreds of dollars to 3 dollars, DSPs are increasingly being adopted in price-sensitive home appliances (such as washing machines, refriger...
Mark Frohnmayer loves to drive, but he's never been able to reconcile his passion for driving with his concerns about the environment. He finds it ridiculous to carry a person for a few miles a day in...
Lesson 1: Install a virtual machine 241265 (I) Why install a virtual machine? Because Linux development is generally carried out in a Linux environment, while we mostly use Windows operating systems i...
A vacuum eutectic furnace is a critical piece of equipment used in the manufacturing and processing of various materials, particularly in the fields of microelectronics and nanotechnology. One of t...[Details]
To understand why car engines need gearboxes, we must first understand the characteristics of different types of engines. An engine refers to a machine that can convert a form of energy into kineti...[Details]
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[Details]
Robotics
has become
LiDAR
's "second growth curve."
While LiDAR was still battling with its "pure vision" rivals in the automotive field, another field ignited the demand f...[Details]
The all-new MG4 was recently officially announced on the Ministry of Industry and Information Technology's (MIIT) new vehicle announcement. The all-new MG4's semi-solid-state battery version addres...[Details]
According to foreign media reports, Nissan Motor has recently reached a cooperation with US battery technology company LiCAP Technologies to jointly promote the research and development of next-gen...[Details]
introduction
The concept of the smart home is gradually developing and gaining market acceptance. We believe its ultimate form lies in the interconnection of all home appliances through open i...[Details]
Compared to cloud databases, minicomputers are purpose-built for decentralized, rugged computing at the edge of the network. By moving applications, analytics, and processing services closer to the...[Details]
On August 21st, BYD announced the launch of its next-generation "Little White Pile" product, the "Lingchong"
charging
pile
, which is now available for general sale. This charging pile feat...[Details]
Methods of DC motor speed regulation:
1. The voltage regulator can be used to change the input voltage and speed directly, which is often used for large kilowatt-level motors.
2. Thyristo...[Details]
For new energy vehicles, the importance of batteries is unquestionable. Not only does it determine the performance of the vehicle, but the battery density also has a great relationship with the veh...[Details]
Hair dryer structure and working principle: It is mainly used for drying and shaping hair, but it can also be used for local drying, heating and treatment in laboratories, physiotherapy rooms, ind...[Details]
Cadence and NVIDIA Collaborate to Revolutionize Power Analysis Technology, Accelerating Development of Billion-Gate AI Designs
Cadence's new Palladium Dynamic Power Analysis applicat...[Details]
Renesas Electronics introduces a new USB-C power solution with an innovative three-level topology.
Improve performance while reducing system size
New solution combines excel...[Details]
This series of articles aims to help readers have a brief understanding of the Hongke KPA Automation system and to quickly get started with MoDK, including: an introduction to Hongke KPA Automation...[Details]
MCU
京公网安备 11010802033920号
EEWORLD
