The UT54ACS165E is an 8-bit serial shift register that, when clocked,
shifts the data toward serial output Q
H
. Parallel-in access to each stage
is provided by eight individual data inputs that are enabled by a low
level at the SH/LD input. The devices feature a clock inhibit function
and a complemented serial output Q
H
.
Clocking is accomplished by a low-to-high transition of the CLK input
while SH/LD is held high and CLK INH is held low. The functions of
the CLK and CLK INH (clock inhibit) inputs are interchangeable.
Since a low CLK input and a low-to-high transition of CLK INH will
also accomplish clocking, CLK INH should be changed to the high
level only while the CLK input is high. Parallel loading is disabled
when SH/LD is held high. Parallel inputs to the registers are enabled
while SH/LD is low independently of the levels of CLK, CLK INH or
SER inputs.
The device is characterized over the full military temperature range of
-55°C to +125°C.
Note:
1. Q
n
= The state of the referenced output one setup time prior to the Low-to-
High clock transition.
LOGIC SYMBOL
(1)
SH/LD
(15)
CLK INH
(2)
CLK
(10)
SER
(11)
A
(12)
B
(13)
C
(14)
D
(3)
E
(4)
F
(5)
G
(6)
H
SRG8
C1 (LOAD)
≥1
C2/
PINOUT
16-Lead Flatpack
Top View
SH/LD
CLK
E
F
G
H
Q
H
V
SS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
DD
CLK INH
D
C
B
A
SER
Q
H
2D
1D
1D
1D
(9)
Q
(7)
H
Q
H
Note:
1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and
IEC Publication 617-12.
1
LOGIC DIAGRAM
A
(11
)
SH/LD
B
(12)
C
(13)
D
(14)
E
(3)
F
(4)
G
(5)
H
(6)
(1)
CLK INH
CLK
(15)
(2)
S
C
SER
S
C
D Q
B
S
C
DQ
C
S
C
D Q
D
S
C
D Q
E
S
C
D Q
F
S
C
D Q
G
S
C
(9)
Q
H
(10
)
D
Q
A
(7)
D Q
H
R
R
R
R
R
R
R
R
Q
H
RADIATION HARDNESS SPECIFICATIONS
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
LIMIT
1.0E6
80
120
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
2
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
Θ
JC
I
I
P
D
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum power dissipation
LIMIT
-0.3 to 7.0
-.3 to V
DD
+ .3
-65 to +150
+175
+300
20
±10
1
UNITS
V
V
°C
°C
°C
°C/W
mA
W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these
or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
3.0 to 5.5
0 to V
DD
-55 to + 125
UNITS
V
V
°C
3
DC ELECTRICAL CHARACTERISTICS FOR THE UT54ACS165E
7
( V
DD
= 3.0V to 5.5V; V
SS
= 0V
6
; -55°C < T
C
< +125°C)
SYMBOL
V
IL
Description
Low-level input voltage
1
High-level input voltage
1
CONDITION
VDD
3.0V
5.5V
V
IH
3.0V
5.5V
I
IN
V
OL
Input leakage current
Low-level output voltage
3
High-level output voltage
3
Short-circuit output current
2 ,4
V
IN
= V
DD
or V
SS
I
OL
= 100µA
5.5V
3.0V
4.5V
V
OH
I
OH
= -100µA
3.0V
4.5V
I
OS
V
O
= V
DD
and V
SS
3.0V
5.5V
I
OL
Low level output current
9
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
I
OH
High level output current
9
V
IN
= V
DD
or V
SS
V
OH
= V
DD
-0.4V
P
total
I
DDQ
C
IN
C
OUT
Power dissipation
2, 8
Quiescent Supply Current
Input capacitance
5
Output capacitance
5
C
L
= 50pF
V
IN
= V
DD
or V
SS
ƒ
= 1MHz
ƒ
= 1MHz
3.0V
5.5V
3.0V
5.5V
5.5V
3.0V
5.5V
0V
0V
2.75
4.25
-100
-200
6
8
-6
-8
2.9
1.16
10
15
15
mW/
MHz
µA
pF
pF
mA
100
200
mA
mA
2.1
3.85
-1
1
0.25
0.25
V
µA
V
MIN
MAX
0.9
1.65
V
UNIT
V
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%, -
50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are
guaranteed to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density
≤5.0E5
amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765pF/
MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose
≤
1E6 rads(Si) per MIL-STD-883 Method 1019 Condition B.
8. Power dissipation specified per switching output.
9. This value is guaranteed based on characterization data, but not tested.
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