EEPROM, 64KX8, 250ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| package instruction | CERAMIC, LCC-32 |
| Reach Compliance Code | unknown |
| Maximum access time | 250 ns |
| command user interface | NO |
| Data polling | YES |
| Durability | 10000 Write/Erase Cycles |
| JESD-30 code | R-CQCC-N32 |
| JESD-609 code | e0 |
| length | 13.965 mm |
| memory density | 524288 bit |
| Memory IC Type | EEPROM |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 32 |
| word count | 65536 words |
| character code | 64000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 64KX8 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | QCCN |
| Encapsulate equivalent code | LCC32,.45X.55 |
| Package shape | RECTANGULAR |
| Package form | CHIP CARRIER |
| page size | 128 words |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 5 V |
| Programming voltage | 5 V |
| Certification status | Not Qualified |
| Filter level | MIL-STD-883 |
| Maximum seat height | 3.05 mm |
| Maximum standby current | 0.0005 A |
| Maximum slew rate | 0.05 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) - hot dipped |
| Terminal form | NO LEAD |
| Terminal pitch | 1.27 mm |
| Terminal location | QUAD |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| switch bit | YES |
| width | 11.425 mm |
| Maximum write cycle time (tWC) | 5 ms |
| Base Number Matches | 1 |
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