The UT54ACS164E and the UT54ACTS164E are 8-bit shift
registers which feature AND-gated serial inputs and an asyn-
chronous clear. The gated serial inputs (A and B) permit com-
plete control over incoming data. A low at either input inhibits
entry of new data and resets the first flip-flop to the low level
at the next clock pulse. A high-level at both serial inputs sets
the first flip-flop to the high level at the next clock pulse. Data
at the serial inputs may be changed while the clock is high or
low, providing the minimum setup time requirements are met.
Clocking occurs on the low-to-high-level transition of the clock
input.
The devices are characterized over full military temperature
range of -55°C to +125°C.
Notes:
1. Q
A0
, Q
B0
, Q
H0
= the level of Q
A
, Q
B
or Q
H
, respectively, before the indicated
steady-state input conditions were established.
2. Q
An
and Q
Gn
= the level of Q
A
or Q
G
before the most recent
↑
transition of
the clock; indicates a one-bit shift.
LOGIC SYMBOL
(9)
CLR
(8)
CLK
A
(1)
(2)
SRG8
R
C1/
&
1D
(3)
(4)
PINOUT
14-Lead Flatpack
Top View
A
B
Q
A
Q
B
Q
C
Q
D
V
SS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
Q
H
Q
G
Q
F
Q
E
CLR
CLK
B
Q
A
Q
B
(5)
Q
(6)
C
Q
D
(10)
Q
(11)
E
Q
(12)
F
Q
(13)
G
Q
H
Note:
1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and
IEC Publication 617-12.
LOGIC DIAGRAM
CLR
CLK
SERIAL
(9)
(8)
C
R
K
S
C
R
K
S
(3)
Q
A
Q
B
C
R
K
S
(4)
Q
C
C
R
K
S
(5)
Q
D
C
R
K
S
(6)
Q
E
C
R
K
S
(10)
Q
F
C
R
K
S
(11)
Q
G
C
R
K
S
(12)
Q
H
(13)
(1)
A
B (2)
RADIATION HARDNESS SPECIFICATIONS
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
LIMIT
1.0E6
80
120
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
Θ
JC
I
I
P
D
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum power dissipation
LIMIT
-0.3 to 7.0
-.3 to V
DD
+ .3
-65 to +150
+175
+300
20
±10
1
UNITS
V
V
°C
°C
°C
°C/W
mA
W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
3.0 to 5.5
0 to V
DD
-55 to + 125
UNITS
V
V
°C
2
DC ELECTRICAL CHARACTERISTICS FOR THE UT54ACS164E
7
( V
DD
= 3.0V to 5.5V; V
SS
= 0V
6
; -55°C < T
C
< +125°C)
SYMBOL
V
IL
Description
Low-level input voltage
1
High-level input voltage
1
CONDITION
VDD
3.0V
5.5V
V
IH
3.0V
5.5V
I
IN
V
OL
Input leakage current
Low-level output voltage
3
High-level output voltage
3
Short-circuit output current
2 ,4
V
IN
= V
DD
or V
SS
I
OL
= 100µA
5.5V
3.0V
4.5V
V
OH
I
OH
= -100µA
3.0V
4.5V
I
OS
V
O
= V
DD
and V
SS
3.0V
5.5V
I
OL
Low level output current
9
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
I
OH
High level output current
9
V
IN
= V
DD
or V
SS
V
OH
= V
DD
-0.4V
P
total
I
DDQ
C
IN
C
OUT
Power dissipation
2, 8
Quiescent Supply Current
Input capacitance
5
Output capacitance
5
C
L
= 50pF
V
IN
= V
DD
or V
SS
ƒ
= 1MHz
ƒ
= 1MHz
3.0V
5.5V
3.0V
5.5V
5.5V
5.5V
0V
0V
2.75
4.25
-100
-200
6
8
-6
-8
1.9
10
15
15
mW/
MHz
µA
pF
pF
mA
100
200
mA
mA
2.1
3.85
-1
1
0.25
0.25
V
µA
V
MIN
MAX
0.9
1.65
V
UNIT
V
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%, - 50%,
as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are guaranteed
to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density
≤5.0E5
amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose
≤
1E6 rads(Si) per MIL-STD-883 Method 1019 Condition B.
8. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
3
AC ELECTRICAL CHARACTERISTICS FOR THE UT54ACS164E
2
(V
DD
= 3.0V to 5.5V; V
SS
= 0V
1
, -55°C < T
C
< +125°C)
SYMBOL
t
PHL1
PARAMETER
CLK to Qn
C
L
= 30pF
V
DD
3.0V & 3.6V
4.5V & 5.5V
C
L
= 50pF
3.0V & 3.6V
4.5V & 5.5V
t
PLH1
CLK to Qn
C
L
= 30pF
3.0V & 3.6V
4.5V & 5.5V
C
L
= 50pF
3.0V & 3.6V
4.5V & 5.5V
t
PLH2
CLR to Qn
C
L
= 30pF
3.0V & 3.6V
4.5V & 5.5V
C
L
= 50pF
3.0V & 3.6V
4.5V & 5.5V
f
MAX
t
SU1
t
SU2
t
H3
t
W
Maximum clock frequency
Data setup time before CLK↑
CLR inactive
Setup time before CLK
↑
Data hold time after CLK
↑
Minimum pulse width
CLR low
CLK high
CLK low
C
L
= 50pF
C
L
= 50pF
C
L
= 50pF
C
L
= 50pF
C
L
= 50pF
3.0V, 4.5V, and
5.5V
3.0V, 4.5V, and
5.5V
3.0V, 4.5V, and
5.5V
3.0V, 4.5V, and
5.5V
3.0V, 4.5V, and
5.5V
4
4
2
6
MINIMUM
4
4
4
4
2
2
2
2
5
5
5
5
MAXIMUM
21
17
25
21
18
14
22
18
21
17
25
21
83
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
UNIT
ns
Notes:
1. Maximum allowable relative shift equals 50mV.
2. All specifications valid for radiation dose
≤
1E6 rads(Si) per MIL-STD-883 Method 1019 Condition B.
3. Based on characterization, hold time (t
H
) of 0ns can be assumed if data setup time (t
SU1
) is >10ns. This is guaranteed, but not tested.
4
DC ELECTRICAL CHARACTERISTICS FOR THE UT54ACTS164E
7
( V
DD
= 3.0V to 5.5V; V
SS
= 0V
6
; -55°C < T
C
< +125°C)
SYMBOL
V
IL
Description
Low-level input voltage
1
High-level input voltage
1
Input leakage current
Low-level output voltage
3
V
IN
= V
DD
or V
SS
I
OL
= 6mA
I
OL
= 8mA
V
OH
High-level output voltage
3
I
OL
= -6mA
I
OL
= -8mA
I
OS
Short-circuit output current
2 ,4
V
O
= V
DD
and V
SS
CONDITION
VDD
3.0V
5.5V
V
IH
3.0V
5.5V
I
IN
V
OL
5.5V
3.0V
4.5V
3.0V
4.5V
3.0V
5.5V
I
OL
Low level output current
10
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
I
OH
High level output current
10
V
IN
= V
DD
or V
SS
V
OH
= V
DD
-0.4V
P
total
I
DDQ
∆I
DDQ
Power dissipation
2, 8, ,9
Quiescent Supply Current
Quiescent Supply Current Delta
C
L
= 50pF
V
IN
= V
DD
or V
SS
For input under test
V
IN
= V
DD
- 2.1V
For all other inputs
V
IN
= V
DD
or V
SS
C
IN
C
OUT
Input capacitance
5
Output capacitance
5
ƒ
= 1MHz
ƒ
= 1MHz
0V
0V
15
15
pF
pF
3.0V
5.5V
3.0V
5.5V
5.5V
5.5V
5.5V
2.4
3.15
-100
-200
6
8
-6
-8
1.9
10
1.6
mW/
MHz
µA
mA
mA
100
200
mA
2.0
2.75
-1
1
0.4
0.4
µA
V
V
V
V
mA
MIN
MAX
0.8
0.8
V
UNIT
V
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%, - 50%,
as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are guaranteed
to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density
≤5.0E5
amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose
≤
1E6 rads(Si) per MIL-STD-883 Method 1019 Condition B.
8. Power does not include power contribution of any TTL output sink current
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
Microcomputer monitoring of DC power supply in power systemThe DC power supply for power system is mainly used in the substations of hydropower stations, power plants, regions and factories and mines ...
Crown, Reiz, leaking! Leaking oil! LS GS300, keep up, keep up, Toyota has done a great job, Toyota is leaking a lot! Don't give other cars any chance! Oil leakage belongs to Toyota! The great Toyota...
I would like to know what is the function of bufif, for example, what does this program bufif mybuf(out, in, enable) mean? I have just learned Verilog digital system design and I may come here often f...
[i=s]This post was last edited by jameswangsynnex on 2015-3-3 19:59[/i] I received a wireless terminal for China Telecom CDMA2000 today. Some places call it a wireless network card, and some merchants...
【
Abstract
】
RFID technology will be ubiquitous in the future, and there is no doubt about it, because it brings convenience and timeliness to people, which means efficiency and...[Details]
The radio frequency identification (RFID) market is experiencing strong growth, with sales reaching $1.7 billion in 2004 and expected to reach $5.9 billion in 2008. This surge in demand is driven b...[Details]
introduction
Oxygen is an important substance for human metabolism. Brain tissue has a high metabolic rate and consumes about 20% of the total oxygen in the body. In the clinical rescue and ...[Details]
At present, the global medical electronics industry is gradually showing attractive development prospects, and the speed of product replacement is constantly increasing. At the same time, due to the p...[Details]
In the field of software development, the most critical but also the most unpredictable phase is the debugging phase. There are many factors that play a role in the process of software debugging, a...[Details]
1 Introduction
In the current test field, the correlation detection method is increasingly widely used for filtering. Correlation filtering can easily separate a signal of a specific frequency...[Details]
Chapter 1 Proposal
Endless salespeople interrupt your normal work schedule;
Employees leave their work stations without permission during working hours;
Unauthorized persons ente...[Details]
Broadband services supporting triple play voice, video and data are evolving for first mile customers (small businesses and homes). A key factor in this FTTx evolution is GPON (Gigabit Passive Opti...[Details]
MOSFETs are widely used as power switching elements in regulators and motor controllers. They are available as discrete devices or integrated into ICs in various H-bridge configurations.
A hig...[Details]
This article will discuss a common problem in wireless mobile data reception.
Problems facing RF receivers
The common problem faced by RF receivers is that the same hardware must be used ...[Details]
AD604 is a product of Analog Devices (AD). Compared with similar products, AD604 has the characteristics of ultra-low noise, high precision, continuously adjustable gain, and the decibel (dB...[Details]
1 Introduction
Generally, when transmitting information over short distances through electrical signals, baseband signals can be directly transmitted. However, over long distances, baseban...[Details]
1 Introduction
Reliability research originated from weapon systems. After nearly half a century of development, it has become an engineering discipline that covers all disciplines and industri...[Details]
Introduction: Generally speaking, the power supplies used to drive today's high-resolution analog/digital converters have AC or DC loads of hundreds of ohms or more. Therefore, an operational ampli...[Details]
With the rapid development of my country's power industry, the power system has higher requirements for the collection of power generation, transmission, distribution and consumption. As a prerequis...[Details]
Power technology
京公网安备 11010802033920号
EEWORLD
