BPV23NF(L)
Vishay Telefunken
Silicon PIN Photodiode
Description
BPV23NF(L) is a high speed and high sensitive PIN
photodiode in a plastic package with a spherical side
view lens.
The epoxy package itself is an IR filter, spectrally
matched to GaAs on GaAs and GaAlAs on GaAlAs IR
emitters (
l
p
= 950 nm, s
rel
(
l
= 875 nm) > 90 %).
Lens radius and chip position are perfectly matched to
the chip size, giving high sensitivity without
compromising the viewing angle.
In comparison with flat packages the spherical lens
package achieves a sensitivity improvement of 80%.
94 8633
Features
D
D
D
D
D
D
D
Large radiant sensitive area (A = 5.7 mm
2
)
Wide viewing angle
ϕ
=
±
60
°
Improved sensitivity
Fast response times
Low junction capacitance
Plastic package with universal IR filter
Option ”L”: long lead package optional available
with suffix ”L”; e.g.: BPV23FL
Applications
Infrared remote control and free air transmission systems in combination with IR emitter diodes
(TSU.–, TSI.–, or TSH.–Series). High sensitivity detector for high data rate transmission systems.
The IR filter matches perfectly to the high speed infrared emitters in the 830 nm to 880 nm wavelength range.
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
T
amb
Symbol
V
R
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
60
215
100
–55...+100
–55...+100
260
350
Unit
V
mW
°
C
°
C
°
C
°
C
K/W
x
25
°
C
t
x
5s
Document Number 81513
Rev. 3, 16-Nov-99
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BPV23NF(L)
Vishay Telefunken
Basic Characteristics
T
amb
= 25
_
C
Parameter
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Serial Resistance
Open Circuit Voltage
Temp. Coefficient of V
o
Short Circuit Current
Reverse Light Current
Temp. Coefficient of I
ra
Absolute Spectral Sensitivity
y
Test Conditions
I
F
= 50 mA
I
R
= 100
m
A, E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 12 V, f = 1 MHz
E
e
= 1 mW/cm
2
,
l
= 950 nm
E
e
= 1 mW/cm
2
,
l
= 950 nm
E
e
= 1 mW/cm
2
,
l
= 950 nm
E
e
= 1 mW/cm
2
,
l
= 870 nm, V
R
= 5 V
E
e
= 1 mW/cm
2
,
l
= 950 nm, V
R
= 10 V
V
R
= 5 V,
l
= 870 nm
V
R
= 5 V,
l
= 950 nm
Symbol
V
F
V
(BR)
I
ro
C
D
R
S
V
o
TK
Vo
I
k
I
ra
TK
Ira
s(
l
)
s(
l
)
ϕ
Min
60
2
48
900
390
–2.6
65
65
0.1
0.57
0.60
±60
940
790...1050
90
4x10
–14
5x10
12
70
70
4
1
30
Typ
1
Max
1.3
Unit
V
V
nA
pF
W
45
mV
mV/K
m
A
m
A
%/K
A/W
A/W
deg
nm
nm
%
W/√ Hz
cm√Hz/
W
ns
ns
MHz
MHz
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency
l
= 950 nm
Noise Equivalent Power
V
R
= 10 V,
l
= 950 nm
Detectivity
V
R
= 10 V,
l
= 950 nm
Rise Time
Fall Time
Cut–Off Frequency
V
R
= 10 V, R
L
= 1k
W
,
l
= 820 nm
V
R
= 10 V, R
L
= 1k
W
,
l
= 820 nm
V
R
= 12 V, R
L
= 1k
W
,
l
= 870 nm
V
R
= 12 V, R
L
= 1k
W
,
l
= 950 nm
l
p
l
0.5
h
t
r
t
f
f
c
f
c
NEP
D
*
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Document Number 81513
Rev. 3, 16-Nov-99
BPV23NF(L)
Vishay Telefunken
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
1000
I
ra
– Reverse Light Current (
m
A )
I
ro
– Reverse Dark Current ( nA )
100
1 mW/cm
2
0.5 mW/cm
2
l
=950nm
100
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
10
10
V
R
=10V
1
20
40
60
80
100
0.02 mW/cm
2
1
0.1
94 8425
1
10
100
94 8403
T
amb
– Ambient Temperature (
°C
)
V
R
– Reverse Voltage ( V )
Figure 1. Reverse Dark Current vs. Ambient Temperature
I
ra rel
– Relative Reverse Light Current
1.4
Figure 4. Reverse Light Current vs. Reverse Voltage
80
C
D
– Diode Capacitance ( pF )
1.2
V
R
=5V
l
=950nm
60
E=0
f=1MHz
1.0
40
0.8
20
0.6
0
94 8409
0
20
40
60
80
100
94 8423
0.1
1
10
100
T
amb
– Ambient Temperature (
°C
)
V
R
– Reverse Voltage ( V )
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
1000
I
ra
– Reverse Light Current (
m
A )
Figure 5. Diode Capacitance vs. Reverse Voltage
S (
l
)
rel
– Relative Spectral Sensitivity
10
94 8426
1.2
1.0
0.8
0.6
0.4
0.2
0
750
100
10
1
V
R
=5V
l
=950nm
0.1
0.01
94 8424
0.1
1
850
950
1050
1150
E
e
– Irradiance ( mW / cm
2
)
l
– Wavelength ( nm )
Figure 3. Reverse Light Current vs. Irradiance
Figure 6. Relative Spectral Sensitivity vs. Wavelength
Document Number 81513
Rev. 3, 16-Nov-99
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