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BUK7623-75A

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size122KB,15 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

BUK7623-75A Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BUK7623-75A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codenot_compliant
ConfigurationSingle
Maximum drain current (Abs) (ID)53 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Humidity sensitivity level1
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)138 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
Base Number Matches1
BUK7523-75A; BUK7623-75A
TrenchMOS™ standard level FET
Rev. 01 — 09 October 2000
Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK7523-75A in SOT78 (TO-220AB)
BUK7623-75A in SOT404
(D
2
-PAK).
2. Features
s
s
s
s
TrenchMOS™ technology
Q101 compliant
175
°C
rated
Standard level compatible.
3. Applications
c
c
s
Automotive and general purpose power switching:
x
12 V, 24 V and 42 V loads
x
Motors, lamps and solenoids.
4. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT78, SOT404, simplified outline and symbol
Description
gate (g)
mb
Simplified outline
Symbol
drain (d)
source (s)
mounting base;
connected to drain (d)
mb
d
g
s
2
MBK106
MBB076
1
3
MBK116
1 2 3
SOT78 (TO-220AB)
SOT404 (D
2
-PAK)
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