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BUK763R1-40B

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size124KB,15 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

BUK763R1-40B Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BUK763R1-40B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codenot_compliant
ConfigurationSingle
Maximum drain current (Abs) (ID)75 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Humidity sensitivity level1
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)300 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
Base Number Matches1
BUK75/763R1-40B
TrenchMOS™ standard level FET
Rev. 02 — 16 October 2002
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive TrenchMOS™ technology.
Product availability:
BUK753R1-40B in SOT78 (TO-220AB)
BUK763R1-40B in SOT404 (D
2
-PAK).
1.2 Features
s
Very low on-state resistance
s
175
°C
rated
s
Q101 compliant
s
Standard level compatible.
1.3 Applications
s
Automotive systems
s
Motors, lamps and solenoids
s
12 V loads
s
General purpose power switching.
1.4 Quick reference data
s
E
DS(AL)S
1.6 J
s
I
D
75 A
s
R
DSon
= 2.6 mΩ (typ)
s
P
tot
300 W
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT78 and SOT404, simplified outlines and symbol
Description
gate (g)
drain (d)
source (s)
mounting base,
connected to
drain (d)
1
MBK106
Simplified outline
mb
mb
Symbol
d
[1]
g
s
MBB076
2
3
MBK116
1 2 3
SOT78 (TO-220AB)
[1]
SOT404 (D
2
-PAK)
It is not possible to make connection to pin 2 of the SOT404 package.
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