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BUK7640-100A

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size95KB,8 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

BUK7640-100A Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BUK7640-100A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codenot_compliant
ConfigurationSingle
Maximum drain current (Abs) (ID)37 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Humidity sensitivity level1
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)138 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
Base Number Matches1
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope
suitable for surface mounting. Using
’trench’ technology the device
features
very
low
on-state
resistance. It is intended for use in
automotive and general purpose
switching applications.
BUK7640-100A
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
GS
= 10 V
MAX.
100
37
138
175
40
UNIT
V
A
W
˚C
mΩ
PINNING - SOT404
PIN
1
2
3
mb
gate
drain
(no connection possible)
source
drain
DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
d
g
2
1
3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
100
100
20
37
26
149
138
175
UNIT
V
V
V
A
A
A
W
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
Minimum footprint, FR4
board
TYP.
-
50
MAX.
1.1
-
UNIT
K/W
K/W
December 1999
1
Rev 1.000
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