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BC178A

Description
Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, HERMETIC SEALED, METAL PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size23KB,2 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric Compare View All

BC178A Overview

Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, HERMETIC SEALED, METAL PACKAGE-3

BC178A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)125
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
BC177
BC178
BC179
MECHANICAL DATA
Dimensions in mm (inches)
5 .8 4 (0 .2 3 0 )
5 .3 1 (0 .2 0 9 )
4 .9 5 (0 .1 9 5 )
4 .5 2 (0 .1 7 8 )
GENERAL PURPOSE
SMALL SIGNAL
PNP BIPOLAR TRANSISTOR
APPLICATIONS
5 .3 3 (0 .2 1 0 )
4 .3 2 (0 .1 7 0 )
)
)
0
0
1
7
2
1
.
.
0
0
(
(
3
2
3
3
.
.
5
4
)
0
0
5
.
.
0 .4 8 (0 .0 1 9 )
0 .4 1 (0 .0 1 6 )
d ia .
n
0
i
(
m
7
.
2
1
The BC 177, BC 178 & BC 179 are silicon
epitaxial planar PNP transistors in TO-18
metal case. They are suitablefor use in
driver audio stages, low noise input audio
stages and as low power, high gain general
purpose transistors.
2 .5 4 (0 .1 0 0 )
N o m .
1 2 .7 (0 .5 0 0 )
m in .
FEATURES
• SILICON NPN
!

• HERMETICALLY SEALED TO18
• SCREENING OPTIONS AVAILABLE
TO–18 METAL PACKAGE
Underside View
PIN 1 – Emitter
PIN 2 – Base
PIN 3 – Collector
BC177
-50V
-45V
-50V
BC178
-30V
-25V
-30V
-5V
-0.1A
0.3W
500W/°C
0.75W
200W/°C
-65 to +175°C
BC179
-25V
-20V
-25V
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
D
P
D
T
j,
T
stg
Collector – Base Continuous Voltage
Collector – Emitter Continuous Voltage With Zero Base Current
Collector – Emitter Continuous Voltage With Base Shortcircuited to Emitter
Emitter – Base Continuous Voltage Reverse Voltage
Continuous Collector Current
Power Device Dissipation @ T
A
= 25°C
Derate above 25°C
Power Device Dissipation @ T
C
= 25°C,
Derate above 25°C
Operating and Storage Junction to Case
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5760
Issue 1

BC178A Related Products

BC178A BC178B BC177A
Description Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, HERMETIC SEALED, METAL PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, HERMETIC SEALED, METAL PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, HERMETIC SEALED, METAL PACKAGE-3
Is it Rohs certified? incompatible incompatible incompatible
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code compliant compliant compli
ECCN code EAR99 EAR99 EAR99
Other features LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 25 V 25 V 45 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 125 240 125
JEDEC-95 code TO-18 TO-18 TO-18
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz
Maker - TT Electronics plc TT Electronics plc
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