MAGNA
TEC
20.0
5.0
BUZ900DP
BUZ901DP
MECHANICAL DATA
Dimensions in mm
3.3 Dia.
N–CHANNEL
POWER MOSFET
POWER MOSFETS FOR
AUDIO APPLICATIONS
FEATURES
1
2.0
2
3
2.0
1.0
• HIGH SPEED SWITCHING
• N–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
1.2
0.6
2.8
3.4
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• P–CHANNEL ALSO AVAILABLE AS
BUZ905DP & BUZ906DP
• DOUBLE DIE PACKAGE FOR MAXIMUM
POWER AND HEATSINK SPACE
5.45 5.45
TO–3PBL
Pin 1 – Gate
Pin 2 – Source
Case is Source
Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSX
Drain – Source Voltage
V
GSS
I
D
I
D(PK)
P
D
T
stg
T
j
R
θJC
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
@ T
case
= 25°C
BUZ900DP
160V
16A
16A
250W
–55 to 150°C
150°C
0.5°C/W
BUZ901DP
200V
±14V
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 2/95
MAGNA
TEC
Characteristic
BV
DSX
BV
GSS
V
GS(OFF)
V
DS(SAT)
*
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Gate – Source Cut–Off Voltage
Drain – Source Saturation Voltage
BUZ900DP
BUZ901DP
STATIC CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Test Conditions
V
GS
= –10V
I
D
= 10mA
V
DS
= 0
V
DS
= 10V
V
GD
= 0
BUZ900DP
BUZ901DP
I
G
= ±100µA
I
D
= 100mA
I
D
= 16A
V
DS
= 160V
I
DSX
Drain – Source Cut–Off Current
V
GS
= –10V
BUZ900DP
V
DS
= 200V
BUZ901DP
yfs*
Forward Transfer Admittance
V
DS
= 10V
I
D
= 3A
1.4
Min.
160
200
±14
0.1
Typ.
Max.
Unit
V
V
1.5
12
10
V
V
mA
10
4
S
DYNAMIC CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Characteristic
C
iss
C
oss
C
rss
t
on
t
off
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–on Time
Turn-off Time
Test Conditions
V
DS
= 10V
f = 1MHz
V
DS
= 20V
I
D
= 7A
Min.
Typ.
950
550
18
160
80
Max.
Unit
pF
ns
* Pulse Test: Pulse Width = 300µs , Duty Cycle
≤
2%.
300
Derating Chart
250
CH AN NE L D ISS IP ATION (W )
200
150
100
50
0
0
25
50
75
100
125
150
T
C
— CASE TEMPERATURE (˚C)
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 2/95
MAGNA
TEC
22
20
18
I
D
— D R AIN C U RR EN T (A)
7V
BUZ900DP
BUZ901DP
Typical Output Characteristics
T
C
= 25˚C
22
20
18
I
D
— D R AIN C U RR EN T (A)
Typical Output Characteristics
T
C
= 75˚C
16
6V
16
14
12
7V
6V
14
5V
12
P
C
5V
P
C
10
8
6
H
=
25
10
8
6
4
H
=
4V
0W
25
4V
0W
3V
3V
4
2
0
0
10
20
30
40
50
2V
2V
1V
2
0
60
70
0
10
20
30
40
50
1V
60
70
V
DS
— DRAIN – SOURCE VOLTAGE (V)
V
DS
— DRAIN – SOURCE VOLTAGE (V)
100
Forward Bias Safe Operating Area
T
C
= 25˚C
G
FS
— TRA NSC ON D UC TAN CE (S)
100
V
DS
= 20V
Transconductance
I
D
— D R AIN C U RR EN T (A)
10
DC
10
T
C
= 25˚C
T
C
= 75˚C
OP
ER
AT
IO
N
1
BUZ900D
BUZ901D
1
160V
0.1
1
10
100
200V
0.1
1000
0
2
4
6
8
10
12
14
16
V
DS
— DRAIN – SOURCE VOLTAGE (V)
I
D
— DRAIN CURRENT (A)
Drain – Source Voltage
vs
16
14
V
DS
— DR AIN – S OU RC E V OLTAGE (V )
Gate – Source Voltage
T
C
= 25˚C
22
20
18
Typical Transfer Characteristics
V
DS
= 10V
T
C
= 25˚C
12
I
D
— D RA IN C UR R EN T (A)
16
14
12
10
8
6
4
2
0
T
C
= 75˚C
T
C
= 100˚C
10
8
6
I
D
= 9A
I
D
= 14A
4
I
D
= 5A
2
I
D
= 3A
0
1
2
3
4
5
6
7
8
9
V
GS
— GATE – SOURCE VOLTAGE (V)
0
1
2
3
4
5
6
7
8
9
10
11
V
GS
— GATE – SOURCE VOLTAGE (V)
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 2/95
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