BDY26C
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
6.35 (0.25)
9.15 (0.36)
HIGH CURRENT
NPN SILICON TRANSISTOR
FEATURES
•
•
•
•
•
HIGH SWITCHING CURRENTS
HIGH RELIABILITY
CECC SCREENING OPTIONS
SPACE QUALITY LEVELS OPTIONS
JAN LEVEL SCREENING OPTIONS
38.61 (1.52)
39.12 (1.54)
0.97 (0.060)
1.10 (0.043)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
22.23
(0.875)
max.
APPLICATIONS
•
•
SWITCHING REGULATORS
LINEAR APPLICATIONS
TO3 (TO204AA)
Pin 1 = Base
Pin 2 = Emitter
Case = Collector
ABSOLUTE MAXIMUM RATINGS
T
CASE
= 25° unless otherwise stated
C
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
J
T
stg
Collector - Base Voltage
Collector - Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
Total Power Dissipation at
T
case
= 25°
C
Derate above 25°
C
Junction Temperature
Storage Temperature
300V
180V
10V
6A
3A
50W
0.29 W/°
C
200°
C
-65 to 200°
C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
DOC 6012, ISSUE 2
BDY26C
THERMAL CHARACTERISTICS
R
th
j-case
Thermal resistance to case
Max
3.5
Unit
°
C/W
ELECTRICAL CHARACTERISTICS
(T
case
=25°C unless otherwise stated)
Parameter
I
CEO
I
CES
I
EBO
V
(BR)CEO
*
V
(BR)CBO
*
V
CE(sat)
*
V
BE(sat)
*
h
FE
*
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Forward-current transfer ratio
Test Conditions
V
CE
= 140V
V
CE
= 180V
V
EB
= 10V
I
C
= 50mA
I
C
= 3mA
I
C
= 2.0A
I
C
= 2.0A
I
C
= 1.0A
I
C
= 2.0A
I
B
= 0.25A
I
B
= 0.25A
V
CE
= 4.0V
V
CE
= 4.0V
I
B
= 0
V
BE
= 0
I
C
= 0
I
B
= 0
Min. Typ. Max.
1.0
1.0
1.0
180
300
0.6
1.2
90
75
82
180
Unit
mA
V
DYNAMIC CHARACTERISTICS
C
obo
F
T
T
on
T
off
Output Capacitance
I
E
= 0
f = 1.0MHz
I
C
= 0.5A
f = 10.0MHz
I
C
= 5.0A
I
C
= 5.0A
I
B1
= 1.0A
I
B1
=-I
B2
= 1.0A
V
CE
= 15V
10
1.0
6
V
CB
= 10V
65
120
pF
Transition Frequency
Turn-on time
Turn-off time
MHz
µs
* Pulse test t
p
= 300µs,
δ
< 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
DOC 6012, ISSUE 2
Microcontroller MCU
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