COMSET
SEMICONDUCTORS
BDY26, 183 T2
BDY27, 184 T2
BDY28, 185 T2
NPN SILICON TRANSISTORS, DIFFUSED
MESA
LF Large Signal Power Amplification
High Current Fast Switching
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
TOT
T
J
T
S
Collector-Emitter Voltage
Ratings
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
Value
180
200
250
300
400
500
10
6
3
Unit
V
V
V
A
A
Watts
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
@ T
C
= 25°
87.5
-65 to +200
°C
Page 1 of
4
COMSET
SEMICONDUCTORS
BDY26, 183 T2
BDY27, 184 T2
BDY28, 185 T2
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
Value
2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter Cutoff
Current
Test Condition(s)
BDY26, 183T2
BDY27, 184T2
BDY28A, 185T2A
BDY28B, 185T2B
BDY28C, 185T2C
BDY26
BDY27
BDY28
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
Min Typ Mx Unit
180
200
250
250
220
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.0
V
CEO(BR)
I
C
=50 mA, I
B
=0
V
I
CEO
V
CE
=180 V
V
CE
=200 V
V
CE
=250 V
mA
I
EBO
Emitter-Base Cutoff Current
V
EB
=10 V
V
CE
=250 V
V
BE
=0 V
1.0
mA
-
-
-
-
-
-
1.0
mA
I
CES
Collector-Emitter Cutoff
Current
V
CE
=300 V
V
BE
=0 V
V
CE
=400 V
V
BE
=0 V
Page 2 of
4
COMSET
SEMICONDUCTORS
BDY26, 183 T2
BDY27, 184 T2
BDY28, 185 T2
Collector-Emitter saturation
Voltage (*)
I
C
=2.0 A, I
B
=0.25 A
V
CE(SAT)
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
A
B
C
A
B
C
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
A
B
C
-
-
-
300
400
500
-
-
-
-
-
-
-
-
-
-
-
-
0.6
-
-
-
1.2
-
-
-
45
90
180
-
V
V
(BR)CBO
Collector-Base Breakdown
Voltage (*)
I
C
=3 mA
V
V
BE(SAT)
Base-Emitter Voltage (*)
I
C
=2.0 A, I
B
=0.25 A
-
-
-
55
65
90
20
45
82
-
V
V
CE
=4 V, I
C
=1 A
h
21E
Static Forward Current
transfer ratio (*)
V
CE
=4 V, I
C
=2 A
15
30
75
10
-
f
T
Transition Frequency
V
CE
=15 V, I
C
=0.5 A,
f=10 MHz
MHz
t
d
+ t
r
Turn-on time
I
C
=5 A,
I
B
=1 A
I
C
=5 A,
I
B1
=1 A,
I
B2
=-1 A
-
-
1
2
3.5
6
µs
t
s
+ t
f
Turn-off time
-
-
µs
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
Page 3 of
4
COMSET
SEMICONDUCTORS
BDY26, 183 T2
BDY27, 184 T2
BDY28, 185 T2
MECHANICAL DATA
DIMENSIONS
A
B
C
D
E
G
H
L
M
N
P
Pin 1 :
Pin 2 :
Case :
mm
25,45
38,8
30,09
17,11
9,78
11,09
8,33
1,62
19,43
1
4,08
Base
Emitter
Collector
Page 4 of
4
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