BFP92AW
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range, especially for wide band
antenna amplifiers.
Features
D
High power gain
D
Low noise figure
D
High transition frequency
2
1
13 653
13 566
3
4
Marking: W92
Plastic case (SOT 343)
1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter
Absolute Maximum Ratings
Parameters
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation T
amb
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
20
15
2
30
200
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
v
60°C
Maximum Thermal Resistance
Parameters
Junction ambient on glass fibre printed board
(25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thJA
Value
450
Unit
K/W
TELEFUNKEN Semiconductors
Rev. A2, 07-Nov-97
1 (10)
Preliminary Specifications
BFP92AW
Electrical DC Characteristics
T
amb
= 25°C
Parameters / Test Conditions
Collector-emitter cut-off current
V
CE
= 20 V, V
BE
= 0
Collector-base cut-off current
V
CB
= 15 V, I
E
= 0
Emitter-base cut-off current
V
EB
= 2 V, I
C
= 0
Collector-emitter breakdown voltage
I
C
= 1 mA, I
B
= 0
Collector-emitter saturation voltage
I
C
= 30 mA, I
B
= 3 mA
DC forward current transfer ratio
V
CE
= 10 V, I
C
= 14 mA
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
40
15
0.1
100
0.4
Min.
Typ.
Max.
100
100
10
Unit
m
A
nA
m
A
V
V
Electrical AC Characteristics
T
amb
= 25°C
Parameters / Test Conditions
Transition frequency
V
CE
= 10 V, I
C
= 14 mA, f = 500 MHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
Collector-emitter capacitance
V
CE
= 10 V, f = 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
Noise figure
V
CE
= 10 V, I
C
= 2 mA, Z
S
= 50
W
f = 800 MHz
Power gain
V
CE
= 10 V, I
C
= 14 mA, Z
L
= Z
Lopt
f = 800 MHz
Linear output voltage – two tone intermodulation test
V
CE
= 10 V, I
C
= 14 mA, d
IM
= 60 dB,
f
1
= 806 MHz, f
2
= 810 MHz, Z
S
= Z
L
= 50
W
Third order intercept point
V
CE
= 10 V, I
C
= 14 mA, f = 800 MHz
Symbol
f
T
C
cb
C
ce
C
eb
Min.
Typ.
6
0.25
0.2
0.7
Max.
Unit
GHz
pF
pF
pF
F
1.8
dB
G
pe
18
dB
V
1
= V
2
IP
3
120
24
mV
dBm
2 (10)
Preliminary Specifications
TELEFUNKEN Semiconductors
Rev. A2, 07-Nov-97
BFP92AW
Common Emitter S-Parameters
Z
0
= 50 Ohm
S
11
V
CE
/V
I
C
/mA
f/MHz
LIN
MAG
0.905
0.795
0.677
0.552
0.499
0.478
0.463
0.464
0.478
0.492
0.501
0.532
0.550
0.790
0.619
0.499
0.427
0.405
0.405
0.415
0.430
0.447
0.465
0.484
0.518
0.533
0.647
0.475
0.410
0.390
0.385
0.394
0.414
0.435
0.447
0.468
0.491
0.522
0.538
ANG
deg
–16.8
–47.3
–72.7
–103.8
–121.0
–136.4
–156.6
–173.5
177.2
166.5
153.6
143.0
136.4
–27.1
–72.1
–103.6
–137.5
–152.9
–166.6
178.0
165.6
157.7
149.9
140.2
130.8
126.3
–41.7
–100.6
–133.3
–161.5
–174.9
175.6
164.5
153.5
148.0
141.7
133.6
126.2
122.0
LIN
MAG
6.54
5.72
4.83
3.76
3.24
2.84
2.43
2.10
1.94
1.81
1.64
1.49
1.40
14.00
10.70
8.01
5.60
4.65
3.98
3.29
2.80
2.57
2.38
2.12
1.92
1.80
22.60
14.47
9.86
6.55
5.35
4.53
3.70
3.13
2.86
2.64
2.36
2.12
1.98
S
21
ANG
deg
165.6
142.2
124.5
105.3
95.7
87.2
75.5
66.0
59.6
53.5
44.5
36.3
31.6
159.0
129.4
111.4
94.6
86.6
79.5
69.7
61.5
55.9
50.7
42.8
35.3
31.1
151.4
118.3
102.2
88.2
81.3
75.1
66.4
58.9
53.7
49.0
41.7
34.6
30.7
LIN
MAG
0.019
0.049
0.068
0.083
0.088
0.092
0.096
0.098
0.100
0.100
0.107
0.106
0.108
0.017
0.039
0.050
0.059
0.065
0.070
0.078
0.086
0.092
0.097
0.109
0.113
0.117
0.015
0.030
0.038
0.048
0.055
0.062
0.074
0.084
0.092
0.098
0.111
0.116
0.122
S
12
ANG
deg
78.3
60.4
48.5
37.3
33.1
29.9
26.7
25.1
24.9
24.9
25.2
24.8
24.8
74.0
54.0
45.9
42.3
41.8
41.8
41.8
42.1
41.7
41.8
38.9
38.7
37.7
69.2
52.9
50.1
51.4
52.4
52.8
52.3
51.7
50.8
49.5
46.2
45.2
43.8
LIN
MAG
0.973
0.896
0.802
0.707
0.671
0.643
0.614
0.592
0.583
0.578
0.572
0.569
0.556
0.942
0.765
0.634
0.549
0.524
0.508
0.490
0.474
0.469
0.465
0.459
0.455
0.443
0.889
0.637
0.519
0.462
0.451
0.442
0.432
0.421
0.418
0.416
0.410
0.404
0.392
S
22
ANG
deg
–6.9
–17.2
–23.3
–28.7
–31.4
–33.9
–37.9
–42.2
–45.4
–48.3
–53.5
–59.9
–64.3
–11.7
–24.6
–28.1
–29.8
–31.0
–32.3
–35.8
–39.9
–43.1
–46.1
–51.9
–58.4
–62.8
–16.7
–28.3
–27.9
–26.9
–27.6
–28.9
–32.6
–36.8
–40.3
–43.3
–49.4
–56.2
–60.7
2
5
5
10
100
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
100
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
100
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
TELEFUNKEN Semiconductors
Rev. A2, 07-Nov-97
3 (10)
Preliminary Specifications
BFP92AW
Common Emitter S-Parameters
Z
0
= 50 Ohm
S
11
V
CE
/V
I
C
/mA
f/MHz
LIN
MAG
0.561
0.431
0.398
0.391
0.392
0.401
0.423
0.440
0.455
0.478
0.499
0.533
0.546
0.478
0.411
0.402
0.404
0.408
0.423
0.440
0.460
0.476
0.496
0.514
0.548
0.562
0.413
0.427
0.433
0.445
0.449
0.459
0.478
0.500
0.516
0.541
0.556
0.588
0.601
ANG
deg
–51.8
–115.6
–146.2
–171.1
177.6
169.2
159.4
150.1
145.6
139.1
131.7
124.3
120.6
–65.7
–131.9
–158.4
–178.7
171.6
164.2
155.4
147.0
142.7
137.1
129.7
123.0
119.2
–89.8
–149.8
–170.2
173.9
165.9
159.6
152.2
144.4
140.5
134.6
127.8
121.4
117.5
LIN
MAG
26.86
15.65
10.34
6.75
5.50
4.65
3.79
3.20
2.91
2.68
2.40
2.15
2.01
30.79
16.24
10.48
6.75
5.48
4.62
3.77
3.17
2.89
2.66
2.36
2.12
1.99
32.20
15.29
9.65
6.17
5.01
4.22
3.42
2.87
2.61
2.41
2.15
1.92
1.80
S
21
ANG
deg
147.2
113.6
98.7
85.8
79.3
73.3
65.1
57.8
52.7
48.2
40.9
33.9
30.0
142.2
109.1
95.5
83.5
77.5
71.6
63.6
56.5
51.7
46.9
39.6
33.0
29.12
135.2
104.0
91.9
80.9
75.2
69.5
61.5
54.5
49.5
44.8
37.8
30.9
27.0
LIN
MAG
0.013
0.026
0.034
0.045
0.053
0.061
0.072
0.083
0.091
0.098
0.111
0.116
0.122
0.012
0.023
0.030
0.042
0.050
0.059
0.070
0.082
0.090
0.097
0.109
0.115
0.121
0.010
0.019
0.027
0.038
0.047
0.055
0.066
0.078
0.085
0.092
0.105
0.110
0.116
S
12
ANG
deg
67.9
53.2
53.7
55.9
56.9
57.1
56.2
54.7
53.6
52.4
49.2
47.3
46.0
65.1
55.1
57.7
60.5
61.0
60.6
59.2
57.7
56.1
54.8
51.4
49.5
48.0
63.8
57.7
62.2
64.9
65.0
64.8
62.9
60.9
59.7
58.0
54.6
53.1
51.8
LIN
MAG
0.856
0.584
0.483
0.441
0.435
0.430
0.421
0.413
0.410
0.408
0.403
0.396
0.383
0.817
0.542
0.462
0.436
0.433
0.431
0.425
0.417
0.415
0.413
0.409
0.402
0.390
0.766
0.530
0.480
0.467
0.467
0.467
0.461
0.455
0.453
0.452
0.447
0.444
0.431
S
22
ANG
deg
–19.1
–28.5
–26.3
–24.8
–25.3
–26.9
–30.7
–35.3
–38.9
–42.0
–48.3
–55.1
–59.6
–21.1
–26.9
–23.5
–22.0
–23.0
–24.8
–29.1
–33.8
–37.5
–40.8
–47.0
–54.0
–58.5
–21.5
–21.9
–18.6
–18.7
–20.5
–22.8
–27.5
–32.7
–36.4
–39.8
–46.1
–53.2
–57.8
14
5
20
30
100
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
100
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
100
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
4 (10)
Preliminary Specifications
TELEFUNKEN Semiconductors
Rev. A2, 07-Nov-97
BFP92AW
Common Emitter S-Parameters
Z
0
= 50 Ohm
S
11
V
CE
/V
I
C
/mA
f/MHz
LIN
MAG
0.916
0.805
0.686
0.554
0.496
0.467
0.451
0.446
0.456
0.473
0.487
0.518
0.533
0.808
0.633
0.504
0.411
0.387
0.381
0.389
0.402
0.416
0.437
0.464
0.489
0.510
0.680
0.488
0.402
0.365
0.357
0.365
0.388
0.402
0.415
0.437
0.465
0.492
0.518
ANG
deg
–15.8
–45.0
–69.6
–100.1
–117.1
–132.6
–153.3
–171.1
178.9
168.5
154.5
143.4
137.3
–25.3
–67.8
–98.6
–131.6
–148.3
–162.1
–178.2
167.6
160.7
152.5
142.8
133.7
128.9
–38.0
–93.5
–126.0
–156.0
–169.7
179.8
167.7
156.4
150.4
144.1
135.9
128.3
124.3
LIN
MAG
6.53
5.76
4.87
3.84
3.31
2.92
2.50
2.16
2.00
1.86
168
1.54
1.45
13.94
10.82
8.18
5.74
4.77
4.09
3.38
2.88
2.64
2.44
2.19
1.98
1.86
22.27
14.64
10.05
6.68
5.47
4.62
3.80
3.20
2.92
2.70
2.42
2.18
2.04
S
21
ANG
deg
166.1
143.2
125.6
106.6
97.0
88.4
76.8
67.3
61.0
55.1
46.0
37.8
33.4
159.8
130.7
112.5
95.6
87.4
80.3
70.6
62.4
57.1
51.8
43.7
36.4
32.3
152.6
119.7
103.3
89.0
81.9
75.8
67.1
59.6
55.0
50.2
42.7
35.6
31.9
LIN
MAG
0.015
0.041
0.057
0.069
0.074
0.078
0.082
0.084
0.086
0.087
0.090
0.093
0.095
0.014
0.033
0.042
0.051
0.055
0.061
0.068
0.075
0.080
0.085
0.097
0.099
0.105
0.012
0.026
0.033
0.042
0.048
0.055
0.065
0.073
0.079
0.086
0.098
0.102
0.108
S
12
ANG
deg
78.4
61.9
49.8
39.8
35.6
32.9
30.2
29.2
29.0
29.0
29.4
31.1
31.5
74.5
55.5
48.0
44.6
44.4
44.6
45.3
45.5
46.2
46.8
42.4
43.3
42.9
70.4
54.2
51.5
52.9
54.5
55.1
53.6
53.5
53.6
53.1
49.7
49.0
47.9
LIN
MAG
0.975
0.912
0.833
0.751
0.720
0.699
0.672
0.654
0.646
0.642
0.638
0.642
0.630
0.950
0.803
0.690
0.618
0.596
0.584
0.568
0.554
0.552
0.550
0.541
0.542
0.530
0.907
0.695
0.596
0.550
0.539
0.535
0.522
0.513
0.514
0.513
0.509
0.505
0.492
S
22
ANG
deg
–5.9
–14.5
–19.8
–24.8
–27.2
–29.4
–33.5
–37.5
–40.2
–43.1
–47.7
–53.7
–57.7
–9.6
–20.3
–23.4
–25.1
–26.4
–28.0
–31.5
–35.6
–38.4
–41.6
–47.0
–53.1
–57.2
–13.5
–22.7
–22.4
–22.3
–23.4
–25.0
–29.0
–33.1
–35.5
–38.9
–44.5
–50.8
–54.8
2
10
5
10
100
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
100
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
100
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
TELEFUNKEN Semiconductors
Rev. A2, 07-Nov-97
5 (10)
Preliminary Specifications
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